SOT23 Package PNP Transistor LRC S-LMBT2907ALT1G AECQ101 Qualified RoHS Compliant and PPAP Capable Device
Key Attributes
Model Number:
S-LMBT2907ALT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBT2907ALT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT2907LT1G and LMBT2907ALT1G are PNP Silicon General Purpose Transistors in a SOT-23 package. These devices are AEC-Q101 Qualified and PPAP Capable, suitable for automotive and other applications requiring unique site device shipping. They are compliance with RoHS requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package: SOT-23
- Certifications: AEC-Q101 Qualified, PPAP Capable
- Compliance: RoHS
Technical Specifications
| Characteristic | Symbol | LMBT2907 (Min) | LMBT2907 (Max) | LMBT2907A (Min) | LMBT2907A (Max) | Unit |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | V CEO | 40 | 60 | Vdc | ||
| CollectorBase Voltage | V CBO | 60 | 60 | Vdc | ||
| EmitterBase Voltage | V EBO | 5.0 | 5.0 | Vdc | ||
| Collector Current Continuous | I C | 600 | 600 | mAdc | ||
| THERMAL CHARACTERISTICS (FR5 Board) | ||||||
| Total Device Dissipation | PD | 225 | 225 | mW | ||
| Derate above 25C | 1.8 | 1.8 | mW/C | |||
| Thermal Resistance, Junction to Ambient | RJA | 556 | 556 | C/W | ||
| THERMAL CHARACTERISTICS (Alumina Substrate) | ||||||
| Total Device Dissipation | PD | 300 | 300 | mW | ||
| Derate above 25C | 2.4 | 2.4 | mW/C | |||
| Thermal Resistance, Junction to Ambient | RJA | 417 | 417 | C/W | ||
| Junction and Storage Temperature | TJ , Tstg | 55 | +150 | 55 | +150 | C |
| OFF CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 40 | 60 | Vdc | ||
| CollectorEmitter Breakdown Voltage | V (BR)CBO | 60 | 60 | Vdc | ||
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | 5.0 | Vdc | ||
| Collector Cutoff Current | I CEX | 50 | 50 | nAdc | ||
| Collector Cutoff Current | I CBO | 0.020 | 0.010 | Adc | ||
| Collector Cutoff Current (TA =125C) | I CBO | 20 | 10 | Adc | ||
| Base Current | I B | 50 | 50 | nAdc | ||
| ON CHARACTERISTICS | ||||||
| DC Current Gain | h FE | 35 | 75 | |||
| DC Current Gain | h FE | 50 | 100 | |||
| DC Current Gain | h FE | 75 | 100 | |||
| DC Current Gain (IC = 150mAdc) | h FE | 100 | 300 | |||
| DC Current Gain (IC = 500mAdc) | h FE | 30 | 50 | |||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.4 | 0.4 | Vdc | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 1.6 | 1.6 | Vdc | ||
| BaseEmitter Saturation Voltage | V BE(sat) | 1.3 | 1.3 | Vdc | ||
| BaseEmitter Saturation Voltage | V BE(sat) | 2.6 | 2.6 | Vdc | ||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | f T | 200 | 200 | MHz | ||
| Output Capacitance | C obo | 8.0 | 8.0 | pF | ||
| Input Capacitance | C ibo | 30 | 30 | pF | ||
| SWITCHING CHARACTERISTICS | ||||||
| TurnOn Time | t on | 45 | 45 | ns | ||
| Delay Time | t d | 10 | 10 | ns | ||
| Rise Time | t r | 40 | 40 | ns | ||
| Fall Time | t f | 60 | 60 | ns | ||
| Storage Time | t s | 280 | 280 | ns | ||
| TurnOff Time | t off | 200 | 200 | ns | ||
2303082030_LRC-S-LMBT2907ALT1G_C559095.pdf
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