Silicon NPN Transistor LRC LBC846AWT1G General Purpose Electronic Component for Circuit Applications
Key Attributes
Model Number:
LBC846AWT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC846AWT1G
Package:
SC-70
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. BC846, BC847, and BC848 series are general-purpose NPN silicon transistors designed for a wide range of applications. These devices offer reliable performance with various electrical characteristics optimized for different models within the series.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified (for 'S-' prefix devices)
- Compliance: RoHS compliant
Technical Specifications
| Characteristic | Symbol | BC846 | BC847 | BC848 | Unit | Conditions |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | V CEO | 65 | 45 | 30 | V | |
| CollectorBase Voltage | V CBO | 80 | 50 | 30 | V | |
| EmitterBase Voltage | V EBO | 6.0 | 6.0 | 5.0 | V | |
| Collector Current Continuous | I C | 100 | 100 | 100 | mAdc | |
| Total Device Dissipation | P D | 150 | mW | |||
| Thermal Resistance, Junction to Ambient | R JA | 833 | C/W | |||
| Junction and Storage Temperature | T J , T stg | 55 to +150 | C | |||
| OFF CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 65 | 45 | 30 | V | (IC = 10 mA) |
| CollectorBase Breakdown Voltage | V (BR)CBO | 80 | 50 | 30 | V | (IC = 10 A) |
| EmitterBase Breakdown Voltage | V (BR)EBO | 6.0 | 6.0 | 5.0 | V | (IE = 1.0 A) |
| Collector Cutoff Current | I CBO | 15 | nA | (VCB = 30 V) | ||
| Collector Cutoff Current | I CBO | 5.0 | A | (VCB = 30 V, TA = 150C) | ||
| ON CHARACTERISTICS | ||||||
| DC Current Gain | hFE | 110180 | 220290 | 420520 | (IC = 2.0 mA, V CE = 5.0 V) | |
| DC Current Gain | hFE | 200450 | 450800 | (IC = 2.0 mA, V CE = 5.0 V) | ||
| CollectorEmitter Saturation Voltage | V CE(sat) | 0.25 | V | (IC = 10 mA, IB = 0.5 mA) | ||
| CollectorEmitter Saturation Voltage | V CE(sat) | 0.6 | V | (IC = 100 mA, IB = 5.0 mA) | ||
| BaseEmitter Saturation Voltage | V BE(sat) | 0.7 | V | (IC = 10 mA, IB = 0.5 mA) | ||
| BaseEmitter Saturation Voltage | V BE(sat) | 0.9 | V | (IC = 100 mA, IB = 5.0 mA) | ||
| BaseEmitter Voltage | V BE(on) | 580660 | 660700 | mV | (IC = 2.0 mA, V CE = 5.0 V) | |
| BaseEmitter Voltage | V BE(on) | 770 | mV | (IC = 10 mA, V CE = 5.0 V) | ||
| SMALL-SIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | f T | 100 | MHz | (IC = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) | ||
| Output Capacitance | Cobo | 4.5 | pF | (V CB = 10 V, f = 1.0 MHz) | ||
| Noise Figure | NF | 10 | dB | (IC = 0.2 mA, V CE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) | ||
| Noise Figure | NF | 4.0 | dB | (IC = 0.2 mA, V CE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) | ||
2206012016_LRC-LBC846AWT1G_C559068.pdf
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