Surface Mount Thyristor Littelfuse MCR12DSNT4G for Capacitive Discharge Ignition and Process Control
Product Overview
The MCR12DSM and MCR12DSN are surface mount thyristors designed for high volume, low cost, industrial and consumer applications. They feature a passivated die surface for reliability, low level triggering and holding characteristics, and are UL recognized with a V-0 flammability rating. These devices are suitable for applications such as motor control, process control, temperature, light and speed control, CDI (Capacitive Discharge Ignition), and small engines.
Product Attributes
- Brand: Littelfuse
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: UL Recognized (V-0 flammability rating)
- ESD Ratings: Human Body Model, 3B > 8000V; Machine Model, C > 400V
Technical Specifications
| Rating | Symbol | MCR12DSM | MCR12DSN | Unit | Notes |
| Peak Repetitive OffState Voltage | VDRM / VRRM | 600 | 800 | V | (TC = 40 to +110C, Sine Wave, 50 to 60 Hz, RGK = 1 k ) |
| OnState RMS Current | IT(RMS) | 12 | A | (180 Conduction Angles; TC = 75C) | |
| Average On-State Current | IT (AV) | 7.6 | A | (180 Conduction Angles; TC = 75C) | |
| Non-Repetitive Surge Current | ITSM | 100 | A | (1/2 Cycle, Sine Wave 60 Hz, TJ = 110C) | |
| Circuit Fusing Consideration | I2t | 41 | As | (t = 8.3 ms) | |
| Forward Peak Gate Power | PGM | 5.0 | W | (Pulse Width 1.0 sec, TC= 75C) | |
| Forward Average Gate Power | PG (AV) | 0.5 | W | (t = 8.3 ms, TC = 75C) | |
| Forward Peak Gate Current | IGM | 2.0 | A | (Pulse Width 1.0 sec, TC= 75C) | |
| Operating Junction Temperature Range | TJ | -40 to +110 | C | ||
| Storage Temperature Range | Tstg | -40 to +150 | C | ||
| Thermal Resistance, JunctiontoCase | RJC | 2.2 | C/W | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 88 | C/W | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 80 | C/W | (Note 2) | |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | C | (Note 3) | |
| Peak Repetitive Forward or Reverse Blocking Current | IDRM / IRRM | - | 10 / 500 | A | TJ = 25C / 110C |
| Peak Reverse Gate Blocking Voltage | VGRM | 10 - 18 | V | (IGR = 10 A) | |
| Peak Reverse Gate Blocking Current | IGRM | _ _ 1.2 | A | (VGR = 10 V) | |
| Peak Forward OnState Voltage | VTM | 1.3 - 1.9 | V | (Note 5), (ITM = 20 A) | |
| Gate Trigger Voltage (Pulse) | IGT | 5.0 - 200 / 300 | A | TJ = 25C / 40C (Note 6) | |
| Gate Trigger Voltage (Continuous dc) | VGT | 0.45 - 1.0 / 1.5 | V | TJ = 25C / 40C (Note 6) | |
| Holding Current | IH | 0.5 - 6.0 / 10 | mA | TJ = 25C / 40C | |
| Latching Current | IL | 0.5 - 6.0 / 10 | mA | TJ = 25C / 40C | |
| Turn-On Time | tgt | _ 2.0 - 5.0 | s | ||
| Critical Rate of Rise of OffState Voltage | dv/dt | 2.0 - 10 | V/s | (Note 4) | |
| Critical Rate of Rise of OnState Current | di/dt | 50 - 100 | A/s | ||
2410010200_Littelfuse-MCR12DSNT4G_C5342232.pdf
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