N Channel MOSFET LGE 2SK3018 featuring low on resistance and 30V Drain Source Voltage for electronics
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@0.1mA
Reverse Transfer Capacitance (Crss@Vds):
9pF@5V
Number:
1 N-channel
Pd - Power Dissipation:
150mW
Input Capacitance(Ciss):
13pF@5V
Gate Charge(Qg):
-
Mfr. Part #:
2SK3018
Package:
SOT-323
Product Description
2SK3018 N-Channel MOSFET
The 2SK3018 is an N-Channel MOSFET designed for general-purpose applications. It offers a Drain-Source Voltage (VDS) of 30V and a Continuous Drain Current (ID) of 0.1A. Key features include low on-resistance (RDS(ON)) at various gate-source voltages, making it suitable for switching and amplification circuits.
Product Attributes
- Brand: LG SEMI
- Model: 2SK3018
- Type: N-Channel MOSFET
- Marking: KN
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 1 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=3V , ID=0.1mA | 0.8 | 1.5 | V | |
| Forward Transconductance | gFS | VDS=3V, ID=10mA | 20 | mS | ||
| Input Capacitance | Ciss | VGS=0V, VDS=5V, f=1MHz | 13 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=5V, f=1MHz | 9 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=5V, f=1MHz | 4 | pF | ||
| Turn-On Delay Time | td(on) | VGS=5V, VDS=5V, ID=10mA,RL=500,RG=10 | 15 | ns | ||
| Turn-On Rise Time | tr | VGS=5V, VDS=5V, ID=10mA,RL=500,RG=10 | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=5V, VDS=5V, ID=10mA,RL=500,RG=10 | 80 | ns | ||
| Turn-Off Fall Time | tf | VGS=5V, VDS=5V, ID=10mA,RL=500,RG=10 | 80 | ns | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=4V, ID=10mA | 8 | |||
| Static Drain-Source On-Resistance | RDS(On) | VGS=2.5V, ID=1mA | 13 |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Drain-Source Voltage | VDS | 30 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID | 100 | mA |
| Pulsed Drain Current (Note.1) | IDM | 400 | mA |
| Power Dissipation | PD | 150 | mW |
| Junction Temperature | TJ | 150 | C |
| Storage Temperature Range | Tstg | -55 to 150 | C |
Note.1: PW 10us, Duty Cycle 1%
2410122018_LGE-2SK3018_C3010097.pdf
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