High Side Load Switching P Channel MOSFET LGE BSS84DW with Pb Free and RoHS Compliance Certification
Key Attributes
Model Number:
BSS84DW
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
180mA
RDS(on):
2.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Input Capacitance(Ciss):
25.2pF
Output Capacitance(Coss):
5.9pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
530pC@10V
Mfr. Part #:
BSS84DW
Package:
SOT-363
Product Description
BSS84DW -50V/-0.18A P Channel Small Signal MOSFET
The BSS84DW is a P-Channel Small Signal MOSFET designed for high-side load switching, general purpose interfacing, and high-speed line driving applications. It offers low RDS(on) at VGS=-10V, -5V logic level control, and ESD protection. This device is Pb-free and RoHS compliant, housed in a SOT363 package.
Product Attributes
- Brand: LGE Semiconductor
- Product Name: BSS84DW
- Package: SOT363
- Certifications: PbFree, RoHS Compliant
- Packing: 3000PCS/Reel
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| VGS | Gate-Source Voltage | ±20 | V | ||
| V(BR)DSS | Drain-Source Breakdown Voltage | -50 | V | ||
| TJ | Maximum Junction Temperature | 150 | °C | ||
| TSTG | Storage Temperature Range | -50 | 150 | °C | |
| IDM | Pulse Drain Current (Tested¹) TA=25°C | -1.2 | A | ||
| ID | Continuous Drain Current TA=25°C | -0.18 | A | ||
| ID | Continuous Drain Current TA=70°C | -0.14 | A | ||
| PD | Maximum Power Dissipation TA=25°C | 0.3 | W | ||
| PD | Maximum Power Dissipation TA=70°C | 0.24 | W | ||
| RθJA | Thermal Resistance Junction-Ambient | 400 | °C/W | ||
| Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| V(BR)DSS | Drain-Source Breakdown Voltage VGS=0V, ID=-250µA | -50 | V | ||
| IDSS | Zero Gate Voltage Drain Current(TA=25) VDS=-50V, VGS=0V | -1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current(TA=125) VDS=-40V, VGS=0V | -100 | µA | ||
| IGSS | Gate-Body Leakage Current VGS=±20V, VDS=0V | ±10 | µA | ||
| VGS(TH) | Gate Threshold Voltage VDS=VGS, ID=-250µA | -1.0 | -2.0 | -3.0 | V |
| RDS(ON) | Drain-Source On-State Resistance²) VGS=-10V, ID=-0.15A | 2.6 | 4 | Ω | |
| RDS(ON) | Drain-Source On-State Resistance²) VGS=-4.5V, ID=-0.15A | 3.2 | 6 | Ω | |
| Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| Ciss | Input Capacitance VDS=-25V, VGS=0V, f=1MHz | 25.2 | pF | ||
| Coss | Output Capacitance | 5.9 | pF | ||
| Crss | Reverse Transfer Capacitance | 1.4 | pF | ||
| Qg | Total Gate Charge VDS=-30V, ID=-0.2A, VGS=-10V | 0.53 | nC | ||
| Qgs | Gate Source Charge | 0.14 | nC | ||
| Qgd | Gate Drain Charge | 0.1 | nC | ||
| Switching Characteristics | |||||
| td(on) | Turn on Delay Time VDD=-30V, ID=-0.1A, RG=3.3Ω, VGS=-10V | 1.6 | ns | ||
| tr | Turn on Rise Time | 5.2 | ns | ||
| td(off) | Turn Off Delay Time | 12 | ns | ||
| tf | Turn Off Fall Time | 6.1 | ns | ||
| Source Drain Diode Characteristics | |||||
| ISD | Source drain current (Body Diode) TA=25°C | -0.18 | A | ||
| VSD | Forward on voltage²) TJ=25°C, ISD=-0.1A, VGS=0V | -1.2 | V | ||
2509091530_LGE-BSS84DW_C51892142.pdf
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