LRC LBSS4240LT1G HW General Purpose NPN Silicon Transistor with Automotive Grade and RoHS Compliance
Key Attributes
Model Number:
LBSS4240LT1G-HW
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
LBSS4240LT1G-HW
Package:
SOT-23
Product Description
Product Overview
The LBSS4240LT1G and S-LBSS4240LT1G are NPN Silicon General Purpose Transistors designed for various electronic applications. These transistors offer low collector-emitter saturation voltage and high current capability, contributing to improved device reliability through reduced heat generation. The S- prefix variant is qualified for automotive applications, meeting AEC-Q101 standards and PPAP capability.
Product Attributes
- Brand: Leshan Radio Company, LTD. (LRC)
- Material Compliance: RoHS requirements and Halogen Free
- Certifications: AEC-Q101 qualified (S- prefix)
- Application Specifics: S- prefix for automotive and other applications requiring unique site and control change requirements
Technical Specifications
| Parameter | Symbol | LBSS4240LT1G / S-LBSS4240LT1G | Unit | Notes |
| Maximum Ratings | ||||
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Collector-Base voltage | VCBO | 40 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector current-continuoun | IC | 6 | A | |
| Peak collector current | ICM | 6 | A | tp < 1 ms |
| Total power dissipation | PD | 0.3 | W | |
| Junction temperature | TJ | -55~+150 | ||
| Storage temperature | TSTG | -55~+150 | ||
| Thermal Characteristics | ||||
| Thermal resistance from junction to ambient in free air | RJA | 417 | C/W | Note 1 |
| Thermal resistance from junction to ambient in free air | RJA | 260 | C/W | Note 2 |
| Thermal resistance from junction to case | RJC | 150 | C/W | Note 1 |
| Electrical Characteristics | ||||
| Collector-Emitter cutoff Current | ICEO | 1 | A | IB=0, VCE = 40V |
| Collector-Base cut-off current | ICBO | 100 | nA | IE = 0, VCB = 30 V |
| Emitter-Base cut-off current | IEBO | 100 | nA | IC = 0, VEB = 4 V |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 40 | V | IC= 10mA,IB= 0A |
| CollectorBase Breakdown Voltage | VBR(CBO) | 40 | V | IC= 100A,IE= 0A |
| EmitterBase Breakdown Voltage | VBR(EBO) | 5 | V | IE= 100A,IC= 0A |
| DC current gain | hFE | 150-350 | IC = 100 mA, VCE = 2 V | |
| DC current gain | hFE | 300-700 | IC = 500 mA, VCE = 2 V | |
| DC current gain | hFE | 300-600 | IC = 750 mA, VCE = 2 V | |
| DC current gain | hFE | 240-480 | IC = 1 A, VCE = 2 V | |
| DC current gain | hFE | 180-360 | IC = 2 A, VCE = 2 V | |
| Collector-Emitter saturation voltage | VCE(sat) | 0.75 | V | IC = 100 mA, IB = 1 mA |
| Collector-Emitter saturation voltage | VCE(sat) | 0.25 | V | IC = 500 mA, IB = 50 mA |
| Collector-Emitter saturation voltage | VCE(sat) | 0.20 | V | IC = 750 mA, IB = 15 mA |
| Collector-Emitter saturation voltage | VCE(sat) | 0.25 | V | IC = 1 A, IB = 50 mA (Note 3) |
| Collector-Emitter saturation voltage | VCE(sat) | 0.32 | V | IC = 2 A, IB = 200 mA (Note 3) |
| Base-Emitter saturation voltage | VBE(sat) | 1.1 | V | IC = 2 A,IB = 200 mA (Note 3) |
| Base-Emitter turn on voltage | VBE(on) | 0.75 | V | IC = 100 mA,VCE = 2 V |
| Collector capacitance | Cc | 20 | pF | IE = Ie = 0,VCB = 10 V,f = 1 MHz |
| Transition frequency | fT | 100 | MHz | IC = 100 mA,VCE = 10 V, f = 100 MHz |
2211091800_LRC-LBSS4240LT1G-HW_C2941701.pdf
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