Low RDS on P Channel Power MOSFET LGE G2309 SOT23 Package Pb Free RoHS Compliant
Key Attributes
Model Number:
G2309
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-40℃~+150℃
RDS(on):
300mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Output Capacitance(Coss):
22pF
Input Capacitance(Ciss):
310pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
5.4nC@10V
Mfr. Part #:
G2309
Package:
SOT-23
Product Description
-60V/-2A P Channel Advanced Power MOSFET
This P-Channel Advanced Power MOSFET offers low RDS(on) at VGS=-10V and supports -5V logic level control. Packaged in SOT23, it is Pb-Free and RoHS Compliant, making it suitable for load switching, general switching circuits, and high-speed line drivers.
Product Attributes
- Brand: LGE Semiconductor
- Package: SOT23
- Certifications: PbFree, RoHS Compliant
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Common Ratings (TA=25C Unless Otherwise Noted) | |||||
| Gate-Source Voltage | ±20 | V | |||
| Drain-Source Breakdown Voltage | -60 | V | |||
| Maximum Junction Temperature | 150 | °C | |||
| Storage Temperature Range | -50 | 150 | °C | ||
| Pulse Drain Current | Tested② (TA=25°C) | -8 | A | ||
| Continuous Drain Current | TA=25°C | -2 | A | ||
| Continuous Drain Current | TA=70°C | -1.6 | A | ||
| Maximum Power Dissipation | TA=25°C | 1 | W | ||
| Maximum Power Dissipation | TA=70°C | 0.8 | W | ||
| Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink △JA | 125 | °C/W | ||
| Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| Drain-Source Breakdown Voltage | VGS=0V, ID=-250μA | -60 | V | ||
| Zero Gate Voltage Drain Current | VDS=-60V, VGS=0V (TA=25°C) | -1 | μA | ||
| Zero Gate Voltage Drain Current | VDS=-60V, VGS=0V (TA=125°C) | -100 | μA | ||
| Gate-Body Leakage Current | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VDS=VGS, ID=-250μA | -1.0 | -1.5 | -2.5 | V |
| Drain-Source On-State Resistance | VGS=-10V, ID=-2A | 150 | 200 | mΩ | |
| Drain-Source On-State Resistance | VGS=-4.5V, ID=-1A | 200 | 300 | mΩ | |
| Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| Input Capacitance | VDS=-30V, VGS=0V, f=1MHz | 310 | pF | ||
| Output Capacitance | 22 | pF | |||
| Reverse Transfer Capacitance | 15 | pF | |||
| Total Gate Charge | VDS=-30V, ID=-2A, VGS=-10V | 5.4 | nC | ||
| Gate Source Charge | 1.1 | nC | |||
| Gate Drain Charge | 1.6 | nC | |||
| Switching Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| Turn on Delay Time | VDD=-30V, ID=-2A, RG=3.3Ω, VGS=-10V | 41 | ns | ||
| Turn on Rise Time | 22 | ns | |||
| Turn Off Delay Time | 25 | ns | |||
| Turn Off Fall Time | 32 | ns | |||
| Source Drain Diode Characteristics | |||||
| Source drain current (Body Diode) | TA=25°C | -1.4 | A | ||
| Forward on voltage | Tj=25°C, ISD=-2A, VGS=0V | -0.84 | -1.2 | V | |
2410121513_LGE-G2309_C27975289.pdf
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