Integrated high voltage intelligent power module LINKOSEMI LKS1D3007D designed for BLDC and PMSM motor drive applications
Key Attributes
Model Number:
LKS1D3007D
Product Custom Attributes
High-side Bias Voltage(Vbs):
12V~18V
Operating Temperature:
-40℃~+150℃
Voltage - Isolation:
-
Frequency - Switching:
20kHz
Mfr. Part #:
LKS1D3007D
Package:
ESOP-13
Product Description
Product Description
The LKS1D3007D is a high-voltage, single-phase Intelligent Power Module (IPM) that integrates a high-voltage IC and high-performance MOSFETs. It is designed for Brushless DC (BLDC) and Permanent Magnet Synchronous Motors (PMSM). The low-side MOSFET source can be utilized for current sampling. The input stage features a Schmitt trigger and is compatible with 3.3V, 5V, and 15V logic levels. The LKS1D3007D is housed in an ESOP13 package.
Key features include a built-in 300V/7A MOSFET, bootstrap diode, high robustness against negative transient voltages, a gate drive voltage range of 10V to 20V, and input logic level compatibility with 3.3V, 5V, and 15V. It supports Under-Voltage Lockout (UVLO) on both high-side and low-side, and an internal dead-time generation prevents shoot-through between upper and lower transistors. Applications include high-speed fans, fans, and power tools.
Product Attributes
- Brand: BPSemi
- Origin: China (implied by language and company name)
- Package: ESOP13
- Certifications: None explicitly mentioned
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typical | Max | Unit | Notes |
| Absolute Maximum Ratings | |||||||
| MOSFET Drain-Source Voltage | VDSS | IDSS = 250uA | 300 | V | |||
| MOSFET Continuous Operating Current | ID | TC=25 | 7 | A | Note 2 | ||
| MOSFET Continuous Operating Current | ID | TC=100 | TBD | A | Note 2 | ||
| Maximum Power Dissipation (Single MOSFET) | PD | TC=100 | TBD | W | |||
| Operating Junction Temperature | TJ | -40 | 150 | ||||
| Storage Temperature | TSTG | -40 | 125 | ||||
| Recommended Operating Conditions | |||||||
| Power Stage Supply Voltage | VPN | Between P and N pins | 170 | 240 | V | ||
| Control Supply Voltage | VCC | Between VCC and COM pins | 12.0 | 15.0 | 18.0 | V | |
| High-Side Bias Voltage | VBS | Between VB and VS pins | 12.0 | 15.0 | 18.0 | V | |
| Input Turn-On Voltage Threshold | VIN(ON) | Between VIN and COM pins | 3.0 | VCC | V | ||
| Input Turn-Off Voltage Threshold | VIN(OFF) | Between VIN and COM pins | 0 | 0.4 | V | ||
| Dead Time for Shoot-Through Prevention | TDEAD | VCC = VBS = 12.0 ~ 18.0V, TJ <150C | 1.0 | us | Note 4 (Internal typical 100ns) | ||
| PWM Switching Frequency | FPWM | TJ <150C | 20 | KHz | |||
| Electrical Characteristics (Inverter Section) | |||||||
| MOSFET Drain-Source Breakdown Voltage | BVDSS | VIN = 0 V, ID = 250 uA | 300 | V | |||
| MOSFET Cut-off Drain Current | IDSS | VIN = 0 V, VDS = 300 V | 1 | uA | |||
| Body Diode Forward Voltage | VSD | VCC = VBS = 15V, VIN = 0 V, ID = -7 A | 1.4 | V | |||
| MOSFET On-Resistance | RDS(ON) | VCC = VBS = 15 V, VIN = 5 V, ID =0.5A | 0.73 | ohm | |||
| Switching Times (TON, TOFF, Irr, Trr, Tr, Tf) | VPN =240 V, VCC = VBS = 15 V, ID =7A, VIN = 0~5 V, Inductive Load L = 2.8 mH | TON: 600 ns TOFF: 210 ns Irr: 5.2 A Trr: 64 ns Tr: 41 ns Tf: 10 ns | ns/A | ||||
| Switching Energy (EON, EOFF) | EON: 135 uJ EOFF: 17 uJ | uJ | |||||
| Electrical Characteristics (Control Section) | |||||||
| Quiescent VCC Supply Current | IQCC | VCC = 15V, VIN = 0V | 50 | uA | |||
| IPM Operating VCC Supply Current | ISW | VCC=15V, VIN=15KHz | TBD | mA | |||
| Quiescent VBS Supply Current | IQB | VBS = 15V, VIN = 0V | 35 | uA | |||
| VCC Undervoltage Protection (Rising Edge) | VCC_ON | 8.5 | V | ||||
| VBS Undervoltage Protection (Rising Edge) | VBS_ON | 8.7 | V | ||||
| VCC Undervoltage Protection (Falling Edge) | VCC_UVLO | 7.6 | V | ||||
| VBS Undervoltage Protection (Falling Edge) | VBS_UVLO | 7.8 | V | ||||
| VCC Voltage Hysteresis | VCC_HYS | 0.9 | V | ||||
| VBS Voltage Hysteresis | VBS_HYS | 0.9 | V | ||||
| Input High Level Voltage Threshold | VIH | Logic High Level | 2.4 | V | |||
| Input Low Level Voltage Threshold | VIL | Logic Low Level | 0.6 | V | |||
| Electrical Characteristics (Bootstrap Diode) | |||||||
| Forward Voltage | VFB | IF = 0.8A | 1.65 | V | |||
| Reverse Recovery Time | TRRB | IF = 0.5A | 40 | ns | |||
2402210951_LINKOSEMI-LKS1D3007D_C20618095.pdf
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