switching diode Littelfuse IXYS DSEP29-06AS-TRL with very low leakage current and short recovery time

Key Attributes
Model Number: DSEP29-06AS-TRL
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
250A
Reverse Leakage Current (Ir):
250uA@600V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
165W
Voltage - Forward(Vf@If):
1.61V@30A
Current - Rectified:
30A
Mfr. Part #:
DSEP29-06AS-TRL
Package:
TO-263AA
Product Description

Product Overview

The DSEP29-06AS is a high-performance, fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery time, and improved thermal behavior. Its very low Irm-values and soft reverse recovery contribute to reduced power dissipation and lower turn-on losses in commutating switches, making it ideal for applications requiring efficient and reliable switching. This diode is suitable as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as in rectifiers for switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: TO-263 (D2Pak)
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Recovery Behavior: Very soft reverse recovery
  • Chip Technology: Planar passivated

Technical Specifications

Symbol Definition Conditions Unit Min. Typ. Max.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 600
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 650
IF(AV) average forward current TC = 100C A 29
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 250
IR reverse current, drain current TVJ = 25C A 150
IR reverse current, drain current TVJ = 175C mA 1
VF forward voltage drop IF = 60 A; TVJ = 25C V 1.26 1.56
VF0 threshold voltage TVJ = 175C V 0.91
RF slope resistance for power loss calculation only TVJ = 175C m 9.4
Ptot total power dissipation TC = 25C W 165
TVJ virtual junction temperature C -55 175
Tstg storage temperature C -55 150
RthJC thermal resistance junction to case K/W 0.91 1.26
RthCH thermal resistance case to heatsink K/W 0.25
CJ junction capacitance VR = 400 V; f = 1 MHz; TVJ = 25C pF 26
Weight g 1.5
Product Marking DSEP29-06AS

Dimensions (TO-263 D2Pak):

Dim. min max typ Unit
A 4.06 4.83 mm (Inches)
A1 0.51 0.99 mm (Inches)
b 1.14 1.40 mm (Inches)
b2 1.14 1.40 mm (Inches)
c 0.40 0.74 mm (Inches)
c2 1.14 1.40 mm (Inches)
D 8.38 9.40 mm (Inches)
D1 8.00 8.89 mm (Inches)
E 9.65 10.41 mm (Inches)
E1 6.22 8.50 mm (Inches)
e 2.54 BSC mm (Inches)
H 14.61 15.88 mm (Inches)
L 1.78 2.79 mm (Inches)
L1 1.02 1.68 mm (Inches)
W 0.10 typ. mm (Inches)

2411220425_Littelfuse-IXYS-DSEP29-06AS-TRL_C17251707.pdf

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