Miniature surface mount P channel MOSFET LGE BSS84 optimized for load switching and power management
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
10Ω@20V,0.13A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@10.13A
Reverse Transfer Capacitance (Crss@Vds):
36pF@5V
Number:
1 P-Channel
Pd - Power Dissipation:
225mW
Input Capacitance(Ciss):
30pF@5V
Gate Charge(Qg):
2.1nC@4.5V
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview
The BSS84 is a P-CHANNEL MOSFET designed for energy efficiency and high-speed switching. It features a low threshold voltage and a miniature surface mount package, making it ideal for space-constrained applications. This MOSFET is suitable for DC-DC converters, load switching, and power management in portable and battery-powered devices such as computers, printers, and cellular phones.
Product Attributes
- Brand: LGE (implied by URL)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -50 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -0.13 | A | |||
| Pulsed Drain Current (note 1) | IDM | @tp <10 s | -0.52 | A | ||
| Power Dissipation | PD | 225 | mW | |||
| Thermal Resistance from Junction to Ambient (note 2) | RJA | 556 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ | +150 | ||
| Maximum Lead Temperature for Soldering Purposes, Duration for 5 Seconds | TL | 260 | ||||
| STATIC CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -50 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-50V,VGS = 0V | -15 | A | ||
| Zero gate voltage drain current | IDSS | VDS =-25V,VGS = 0V | -0.1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 5 | A | ||
| Gate threshold voltage (note 3) | VGS(th) | VDS =VGS, ID =-250A | -0.9 | -2 | V | |
| Drain-source on-resistance (note 3) | RDS(on) | VGS =-5V, ID =-0.1A | 10 | |||
| Drain-source on-resistance (note 3) | RDS(on) | VGS =-10V, ID =-0.1A | 8 | |||
| Forward transconductance (note 1) | gFS | VDS=-25V; ID=-100mA | 50 | mS | ||
| DYNAMIC CHARACTERISTICS (note 4) | ||||||
| Input capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 30 | pF | ||
| Output capacitance | Coss | VDS =5V,VGS =0V,f =1MHz | 10 | pF | ||
| Reverse transfer capacitance | Crss | VDS =5V,VGS =0V,f =1MHz | 5 | pF | ||
| SWITCHING CHARACTERISTICS (note 4) | ||||||
| Turn-on delay time | td(on) | VDD=-15V, RL=50, ID =-2.5A | 2.5 | ns | ||
| Turn-on rise time | tr | VDD=-15V, RL=50, ID =-2.5A | 1 | ns | ||
| Turn-off delay time | td(off) | VDD=-15V, RL=50, ID =-2.5A | 16 | ns | ||
| Turn-off fall time | tf | VDD=-15V, RL=50, ID =-2.5A | 8 | ns | ||
| SOURCEDRAIN DIODE CHARACTERISTICS | ||||||
| Continuous Current | IS | -0.13 | A | |||
| Pulsed Current | ISM | -0.52 | A | |||
| Diode forward voltage (note 3) | VSD | IS=-0.13A, VGS = 0V | -2.2 | V | ||
2410121815_LGE-BSS84_C5274440.pdf
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