50V 0.2A N Channel MOSFET LGE BSS139 with Pb Free RoHS Compliance and ESD Protection up to 2000V
Key Attributes
Model Number:
BSS139
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
RDS(on):
1.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.9pF
Output Capacitance(Coss):
3.5pF
Input Capacitance(Ciss):
22.8pF
Gate Charge(Qg):
910pC@10V
Mfr. Part #:
BSS139
Package:
SOT-23
Product Description
Product Overview
The BSS139 is a 50V/0.2A N-Channel Advanced Power MOSFET designed for various applications including LED lighting, ON/OFF switching, and networking. It features low RDS(on) at VGS=10V, 3.3V logic level control, and ESD protection up to 2000V. This device is Pb-Free and RoHS Compliant, housed in a SOT23 package.
Product Attributes
- Brand: LGE Semiconductor (implied by URL and email)
- Package: SOT23
- Certifications: Pb-Free, RoHS Compliant
- ESD Protection: 2000V
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| Gate-Source Voltage | ±20 | V | |||
| Drain-Source Breakdown Voltage | 50 | V | |||
| Maximum Junction Temperature | 150 | °C | |||
| Storage Temperature Range | -50 | 150 | °C | ||
| Pulse Drain Current (Testedⁱ) | TA=25°C | 0.8 | A | ||
| Continuous Drain Current | TA=25°C | 0.2 | A | ||
| Continuous Drain Current | TA=70°C | 0.12 | A | ||
| Maximum Power Dissipation | TA=25°C | 0.225 | W | ||
| Maximum Power Dissipation | TA=70°C | 0.15 | W | ||
| Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | 550 | °C/W | ||
| Static Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | VGS=0V, ID=250μA | 50 | V | ||
| Zero Gate Voltage Drain Current | VDS=25V, VGS=0V, TA=25℃ | 0.1 | μA | ||
| Zero Gate Voltage Drain Current | VDS=50V, VGS=0V, TA=25℃ | 0.5 | uA | ||
| Gate-Body Leakage Current | VGS=±20V, VDS=0V | ±10 | uA | ||
| Gate Threshold Voltage | VDS=VGS, ID=250μA | 0.5 | 1.0 | 1.5 | V |
| Drain-Source On-State Resistance | VGS=10V, ID=0.5A | 1.3 | 2 | Ω | |
| Drain-Source On-State Resistance | VGS=5.0V, ID=0.2A | 1.5 | 3.5 | Ω | |
| Drain-Source On-State Resistance | VGS=2.7V, ID=0.2A | 5.0 | 10 | Ω | |
| Dynamic Electrical Characteristics | |||||
| Input Capacitance | VDS=25V, VGS=0V, f=1MHz | 22.8 | pF | ||
| Output Capacitance | 3.5 | pF | |||
| Reverse Transfer Capacitance | 2.9 | pF | |||
| Total Gate Charge | VDS=25V, ID=0.5A, VGS=10V | 0.91 | nC | ||
| Gate Source Charge | 0.18 | nC | |||
| Gate Drain Charge | 0.3 | nC | |||
| Switching Characteristics | |||||
| Turn on Delay Time | VDD=30V, ID=0.5A, RG=25Ω, VGS=10V | 3.8 | ns | ||
| Turn on Rise Time | 2.5 | ns | |||
| Turn Off Delay Time | - | 19 | ns | ||
| Turn Off Fall Time | 3.9 | ns | |||
| Source Drain Diode Characteristics | |||||
| Source drain current (Body Diode) | TA=25℃ | 0.2 | A | ||
| Forward on voltage | Tj=25℃, ISD=0.5A, VGS=0V | 0.78 | 1.2 | V | |
2509091530_LGE-BSS139_C51892143.pdf
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