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quality Littelfuse IXYS DPG80C400HB Fast Recovery Diode with Common Cathode and RoHS Compliant TO247 Package factory
quality Littelfuse IXYS DPG80C400HB Fast Recovery Diode with Common Cathode and RoHS Compliant TO247 Package factory

Littelfuse IXYS DPG80C400HB Fast Recovery Diode with Common Cathode and RoHS Compliant TO247 Package

Key Attributes
Model Number: DPG80C400HB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
400A
Reverse Leakage Current (Ir):
1uA@400V
Reverse Recovery Time (trr):
45ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):
400V
Pd - Power Dissipation:
215W
Voltage - Forward(Vf@If):
1.43V@40A
Current - Rectified:
40A
Mfr. Part #:
DPG80C400HB
Package:
TO-247-3
Product Description

DPG80C400HB Low Loss and Soft Recovery High Performance Fast Recovery Diode

Product Overview

The DPG80C400HB is a common cathode, high-performance fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery minimizes EMI/RFI, and low Irm reduces power dissipation and turn-on losses in commutating switches. Applications include antiparallel diodes for high-frequency switching devices, antisaturation diodes, snubber diodes, freewheeling diodes, and rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). The device is housed in a TO-247 package, an industry-standard outline, and is RoHS compliant.

Product Attributes

  • Brand: IXYS
  • Part Number: DPG80C400HB
  • Package: TO-247
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Construction: Common Cathode, HiPerFRED

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 400
VRRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 400
IF average forward current TC = 25C A 40
IF average forward current TC = 175C A 80
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 400
IRMS RMS current per terminal A 70
VF forward voltage drop IF = 40 A; TVJ = 25C V 1.43 1.69
VF0 threshold voltage TVJ = 175C V 0.79
IR reverse current, drain current VR = 400 V; TVJ = 25C mA 0.4
IR reverse current, drain current VR = 400 V; TVJ = 175C mA 150
RthJC thermal resistance junction to case K/W 0.7
RthCH thermal resistance case to heatsink K/W 0.25
Ptot total power dissipation TC = 25C W 215
TVJ virtual junction temperature C 175 -55
Tstg storage temperature C 150 -55
Weight g 6
CJ junction capacitance VR = 200 V; f = 1 MHz pF 46
rF slope resistance for power loss calculation only m 7.1
trr reverse recovery time IF = 40 A; diF/dt = 200 A/s; VR = 270 V; TVJ = 125C ns 45
IRM max. reverse recovery current IF = 40 A; diF/dt = 200 A/s; VR = 270 V; TVJ = 125C A 8.5
Qrr reverse recovery charge IF = 40 A; diF/dt = 200 A/s; VR = 270 V; TVJ = 125C C 1.14
Erec recovery energy IF = 40 A; diF/dt = 200 A/s; VR = 270 V; TVJ = 125C J 1.44

2410121715_Littelfuse-IXYS-DPG80C400HB_C497172.pdf

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