Low On State Resistance P Channel MOSFET LGE G2301S Suitable for General Switching Circuits
Key Attributes
Model Number:
G2301S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
140mΩ@4.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
177pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
5.3nC@4.5V
Mfr. Part #:
G2301S
Package:
SOT-23
Product Description
Product Overview
The G2301S is a P-Channel Advanced Power MOSFET designed for high-side load switching and general switching circuit applications. It offers low On-State Resistance (RDS(on)) at various gate-source voltages, including -3.3V logic level control, and comes in a Pb-free, RoHS compliant SOT23 package.
Product Attributes
- Brand: LGE Semi (implied by URL and email)
- Package: SOT23
- Certifications: PbFree, RoHS Compliant
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit | |
| Static Electrical Characteristics | Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID=-250A | -20 | -- | -- | V |
| Zero Gate Voltage Drain Current (IDSS) TA=25 | VDS=-20V, VGS=0V | -- | -- | -1 | A | |
| Zero Gate Voltage Drain Current (IDSS) TA=125 | VDS=-16V, VGS=0V | -- | -- | -100 | uA | |
| Gate-Body Leakage Current (IGSS) | VGS=10V, VDS=0V | -- | -- | 100 | nA | |
| On-State Resistance (RDS(ON)) | VGS=-4.5V, ID=-2A | -- | 125 | 140 | m | |
| VGS=-3.3V, ID=-1A | -- | 140 | 170 | m | ||
| VGS=-2.5V, ID=-1A | -- | 170 | 210 | m | ||
| Dynamic Electrical Characteristics | Input Capacitance (Ciss) | VDS=-10V, VGS=0V, f=1MHz | -- | 177 | -- | pF |
| Output Capacitance (Coss) | -- | 30 | -- | pF | ||
| Reverse Transfer Capacitance (Crss) | -- | 25 | -- | pF | ||
| Gate Charge | Total Gate Charge (Qg) | VDS=-10V, ID=-2A, VGS=-4.5V | -- | 5.3 | -- | nC |
| Gate Source Charge (Qgs) | -- | 0.7 | -- | nC | ||
| Switching Characteristics | Turn on Delay Time (td(on)) | VDD=-10V, ID=-2A, RG=3.3, VGS=-4.5V | -- | 11 | -- | ns |
| Turn on Rise Time (tr) | -- | 32 | -- | ns | ||
| Turn Off Delay Time (td(off)) | -- | 25 | -- | ns | ||
| Turn Off Fall Time (tf) | -- | 38 | -- | ns | ||
| Source Drain Diode Characteristics | Source drain current (Body Diode) (ISD) | TA=25 | -- | -- | -1.2 | A |
| Forward on voltage (VSD) | Tj=25, ISD=-1A, VGS=0V | -- | -0.83 | -1.2 | V | |
| Absolute Maximum Ratings | Gate-Source Voltage (VGS) | -- | 10 | -- | V | |
| Drain-Source Breakdown Voltage (V(BR)DSS) | -- | -20 | -- | V | ||
| Maximum Junction Temperature (TJ) | -- | -- | 150 | C | ||
| Power Dissipation | Continuous Drain Current (ID) @ TA=25C | -- | -- | -2.3 | A | |
| Continuous Drain Current (ID) @ TA=70C | -- | -- | -1.8 | A | ||
| Maximum Power Dissipation (PD) @ TA=25C | -- | -- | 1 | W | ||
| Maximum Power Dissipation (PD) @ TA=70C | -- | -- | 0.8 | W | ||
| Thermal Resistance (JA) Mounted on Large Heat Sink | -- | -- | 125 | C/W |
2410121513_LGE-G2301S_C27975292.pdf
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