Littelfuse IXYS DSEP15-12CR High Frequency Diode with Soft Recovery and Isolated Mounting Surface
HiPerDynFREDTM Epitaxial Diode with Soft Recovery
Product Overview
The HiPerDynFREDTM Epitaxial Diode is designed for high-frequency switching applications, offering a silicon chip on Direct-Copper-Bond substrate for high power dissipation and isolated mounting. It features a very short recovery time, extremely low switching losses, and soft recovery behavior, resulting in low EMI/RFI and reduced turn-on loss in the commutating switch. The diode is avalanche voltage rated for reliable operation and meets UL 94V-0 standards, with 2500V electrical isolation. It is suitable for use as an antiparallel diode, antisaturation diode, snubber diode, free-wheeling diode in converters and motor control circuits, rectifiers in switch mode power supplies, inductive heating, uninterruptible power supplies, and ultrasonic cleaners and welders.
Product Attributes
- Brand: IXYS
- Substrate: Direct-Copper-Bond
- Chip Type: Silicon chip
- Recovery Behavior: Soft recovery
- Isolation: Electrically Isolated Back Surface, 2500V electrical isolation
- Epoxy: Meets UL 94V-0
- Certifications: UL registered E153432
- Package Type: International standard package
- Surface: Isolated mounting surface
Technical Specifications
| Symbol | Conditions | Type | Value | Unit |
|---|---|---|---|---|
| IFAV | DSEP 15-12CR | 15 | A | |
| VRRM | DSEP 15-12CR | 1200 | V | |
| trr | DSEP 15-12CR | 20 | ns | |
| IFRMS | 50 | A | ||
| IFAVM | TC = 130C; rectangular, d = 0.5 | 15 | A | |
| IFRM | tP < 10 s; rep. rating, pulse width limited by TVJM | tbd | A | |
| IFSM | TVJ = 45C; tp = 10 ms (50 Hz), sine | 110 | A | |
| EAS | TVJ = 25C; non-repetitive | 0.1 | mJ | |
| IAS | = 1.0 A; L = 180 H | |||
| IAR | VA = 1.25VR typ.; f = 10 kHz; repetitive | 0.1 | A | |
| TVJ | -55...+175 | C | ||
| TVJM | 175 | C | ||
| Tstg | -55...+150 | C | ||
| Ptot | TC = 25C | 150 | W | |
| VISOL | 50/60 Hz RMS; IISOL < 1 mA | 2500 | V~ | |
| FC | mounting force with clip | 20...120 | N | |
| Weight | typical | 6 | g | |
| IR | TVJ = 25C; VR = VRRM | 100 | A | |
| IR | TVJ = 150C; VR = VRRM | 0.5 | mA | |
| VF | IF = 15 A; TVJ = 150C | 2.67 | V | |
| VF | TVJ = 25C | 4.04 | V | |
| RthJC | 1 | K/W | ||
| RthCH | with heatsink compound | 0.25 | K/W | |
| trr | IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C | 20 | ns | |
| IRM | VR = 100 V; IF = 25 A; -diF/dt = 100 A/s; TVJ = 100C | 4.0 | 4.9 A |
2410010230_Littelfuse-IXYS-DSEP15-12CR_C7577707.pdf
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