Low leakage current fast recovery diode Littelfuse IXYS DPF60C200HB with common cathode configuration

Key Attributes
Model Number: DPF60C200HB
Product Custom Attributes
Mfr. Part #:
DPF60C200HB
Package:
TO-247-3
Product Description

Product Overview

The DPF60C200HB is a high-performance, fast recovery diode from IXYS, featuring a common cathode configuration. It offers low loss and soft recovery characteristics, making it suitable for demanding applications. Key advantages include very low leakage current, very short recovery time, improved thermal behavior, and very low Irm-values with soft reverse recovery for reduced EMI/RFI. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and freewheeling diode in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Series: HiPerFRED
  • Package: TO-247
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Origin: Data according to IEC 60747 and per semiconductor unless otherwise specified

Technical Specifications

Symbol Definition Conditions Unit Typ. Max. Min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 200
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 200
IF(AV) average forward current TC = 25C A 60
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 400
Ptot total power dissipation TC = 25C W 160
VF forward voltage drop IF = 60 A; TVJ = 25C V 1.11 1.30
VF0 threshold voltage IF = 60 A; TVJ = 25C V 0.95
rF slope resistance for power loss calculation only IF = 60 A; TVJ = 25C m 6.6
IR reverse current, drain current VR = 200 V; TVJ = 25C A 0.25
IR reverse current, drain current VR = 200 V; TVJ = 125C mA 150
CJ junction capacitance VR = 150 V; f = 1 MHz; TVJ = 25C pF 42
trr reverse recovery time IF = 30 A; -diF/dt = 20 A/s; VR = 100 V; TVJ = 125C ns 55
IRM max. reverse recovery current IF = 30 A; -diF/dt = 20 A/s; VR = 100 V; TVJ = 125C A 6
Qrr max. reverse recovery charge IF = 30 A; -diF/dt = 20 A/s; VR = 100 V; TVJ = 125C C 10
RthJC thermal resistance junction to case K/W 0.95
RthCH thermal resistance case to heatsink K/W 0.3
TVJ virtual junction temperature C 175 -55
Tstg storage temperature C 150 -55
Weight g 6
Mounting torque Nm 1.2
Mounting force with clip N 120

Dimensions (TO-247)

Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
P1 - 0.29 - 7.39

2512022001_Littelfuse-IXYS-DPF60C200HB_C27767544.pdf

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