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quality High voltage single phase Intelligent Power Module LINKOSEMI LKS1D5005D designed for motor control solutions factory
quality High voltage single phase Intelligent Power Module LINKOSEMI LKS1D5005D designed for motor control solutions factory

High voltage single phase Intelligent Power Module LINKOSEMI LKS1D5005D designed for motor control solutions

Key Attributes
Model Number: LKS1D5005D
Product Custom Attributes
High-side Bias Voltage(Vbs):
12V~18V
Operating Temperature:
-40℃~+150℃
Voltage - Isolation:
-
Frequency - Switching:
20kHz
Mfr. Part #:
LKS1D5005D
Package:
ESOP-13
Product Description

Product Overview

The LKS1D5005D is a high-voltage, single-phase Intelligent Power Module (IPM) integrating a high-voltage IC and high-performance MOSFETs. It is suitable for Brushless DC (BLDC) and Permanent Magnet Synchronous Motors (PMSM). The source of the low-side MOSFET can be used for current sampling. The input includes a Schmitt trigger and is compatible with 3.3V/5V/15V logic levels. The LKS1D5005D is available in an ESOP13 package.

Product Attributes

  • Brand: BPSemi (implied by www.bpsemi.com)
  • Origin: China (implied by BPS Confidential Customer Use Only)
  • Package: ESOP13

Technical Specifications

ParameterConditionsMinTypicalMaxUnitNotes
Absolute Maximum Ratings
VDSS (MOSFET Drain-Source Voltage)IDSS = 250uA500V
ID (MOSFET Continuous Operating Current)TC=255A(Note 2)
ID (MOSFET Continuous Operating Current)TC=1003.16A(Note 2)
PD (Maximum Power Dissipation)Single MOSFET (TC=100)50W
VCC (Control Supply Voltage)VCC and GND terminals20V
VBS (High-Side Bias Voltage)VB and VS terminals20V
VIN (Input Signal Voltage)VIN and GND terminals-0.3VCC+0.3V
TJ (Operating Junction Temperature)-40150
TSTG (Storage Temperature)-40125
Recommended Operating Conditions
VPN (Power Section Supply Voltage)Between PN pins300400V
VCC (Control Section Supply Voltage)Between VCC and GND pins12.015.018.0V
VBS (High-Side Bias Voltage)Between VB and VS pins12.015.018.0V
VIN(ON) (Input Turn-On Voltage Threshold)Between VIN and GND pins3.0VCCV
VIN(OFF) (Input Turn-Off Voltage Threshold)Between VIN and GND pins00.4V
TDEAD (Dead Time to Prevent Shoot-Through)VCC = VBS = 12.0 ~ 18.0V, TJ <150C1.0us(Note 4)
FPWM (PWM Switching Frequency)TJ <150C20KHz
TC(MAX) (Maximum Case Temperature during Operation)TJ <150C120
Electrical Parameters
BVDSS (MOSFET Drain-Source Breakdown Voltage)VIN = 0 V, ID = 250 uA500V
IDSS (MOSFET Cut-off Leakage Current)VIN = 0 V, VDS = 500 V10uA
VSD (Body Diode Forward Conduction Voltage)VCC = VBS = 15V, VIN = 0 V, ID = -5 A1.5V
RDS(ON) (MOSFET On-Resistance)VCC = VBS = 15 V, VIN = 5 V, ID =0.5A1.4ohm
TON (Turn-on Time)VPN =400 V, VCC = VBS = 15 V, ID =5A, VIN = 0~5 V, Inductive Load L = 2.8 mH780nsHigh-side and low-side MOSFETs
TOFF (Turn-off Time)250nsHigh-side and low-side MOSFETs
IQCC (Quiescent VCC Supply Current)VCC = 15V, VIN = 0V155080uA
ISW (VCC Current during Normal Switching)VCC=15V, VIN=15KHz0.6mA
IQB (Quiescent VBS Supply Current)VBS = 15V, VIN = 0V153570uA
VCC_ON (VCC and VBS Normal Operating Voltage Threshold)8.08.69.8V
VBS_ON8.08.89.8V
VCC_UVLO (VCC and VBS Under-Voltage Lockout Voltage Threshold)7.07.68.6V
VBS_UVLO7.27.88.8V
VIH (Turn-on Voltage Threshold, Logic High Level)2.4V
VIL (Turn-off Voltage Threshold, Logic Low Level)0.6V
Deadtime (Built-in by Pre-driver to Prevent Shoot-through)300ns
VFB (Bootstrap Diode Forward Conduction Voltage)IF = 0.2A1.4V
TRRB (Bootstrap Diode Reverse Recovery Time)IF = 0.5A40ns

2402210951_LINKOSEMI-LKS1D5005D_C20618098.pdf

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