High Speed Power MOSFET Littelfuse IXFK20N120P Featuring Low Gate Charge and Avalanche Energy Rating
Product Overview
The IXFK20N120P and IXFX20N120P are N-Channel Enhancement Mode PolarTM HiPerFETTM Power MOSFETs featuring fast intrinsic diodes, dynamic dv/dt rating, avalanche rating, low RDS(ON) and QG, and low package inductance. These MOSFETs offer high power density, are easy to mount, and provide space savings, making them suitable for a wide range of high-voltage and high-speed power switching applications.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by US patents)
- Certifications: Covered by multiple US patents.
Technical Specifications
| Symbol | Test Conditions | Characteristic Values (TJ = 25C Unless Otherwise Specified) | Min. | Typ. | Max. | Unit |
| VDSS | TJ = 25C to 150C | 1200 | V | |||
| TJ = 25C to 150C, RGS = 1M | 1200 | V | ||||
| VGSS | Continuous | ±30 | V | |||
| Transient | ±40 | V | ||||
| ID25 | TC = 25C | 20 | A | |||
| TC = 25C, Pulse Width Limited by TJM | 50 | A | ||||
| IA | TC = 25C | 10 | A | |||
| EAS | TC = 25C | 1 | J | |||
| dv/dt | IS IDM, VDD VDSS, TJ 150C | 15 | V/ns | |||
| PD | TC = 25C | 780 | W | |||
| TJ | -55 | +150 | C | |||
| TJM | 150 | C | ||||
| Tstg | -55 | +150 | C | |||
| TL | Maximum Lead Temperature for Soldering | 300 | C | |||
| TSOLD | 1.6 mm (0.062in.) from Case for 10s | 260 | C | |||
| Md | Mounting Torque (TO-264) | 1.13/10 | Nm/lb.in | |||
| FC | Mounting Force (PLUS247) | 20..120 | N/lb | |||
| Weight | TO-264 | 10 | g | |||
| Weight | PLUS247 | 6 | g | |||
| BVDSS | VGS = 0V, ID = 1mA | 1200 | V | |||
| VGS(th) | VDS = VGS, ID = 1mA | 3.5 | 6.5 | V | ||
| IGSS | VGS = ±30V, VDS = 0V | ±200 | nA | |||
| IDSS | VDS = VDSS, VGS = 0V | 50 | µA | |||
| TJ = 125C | 5 | mA | ||||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 570 | mΩ | |||
| gfs | VDS = 20V, ID = 0.5 ID25, Note 1 | 10 | 16 | S | ||
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 11.1 | nF | |||
| Coss | VGS = 0V, VDS = 25V, f = 1MHz | 600 | pF | |||
| Crss | VGS = 0V, VDS = 25V, f = 1MHz | 60 | pF | |||
| RGi | Gate Input Resistance | 1.6 | Ω | |||
| td(on) | Resistive Switching Times | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 (External) | 48 | ns | ||
| tr | Resistive Switching Times | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 (External) | 45 | ns | ||
| td(off) | Resistive Switching Times | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 (External) | 72 | ns | ||
| tf | Resistive Switching Times | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 (External) | 70 | ns | ||
| Qg(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 193 | nC | |||
| Qgs | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 74 | nC | |||
| Qgd | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 85 | nC | |||
| RthJC | 0.16 | C/W | ||||
| RthCS | 0.15 | C/W | ||||
| IS | Source-Drain Diode, VGS = 0V | 20 | A | |||
| ISM | Source-Drain Diode, Repetitive, Pulse Width Limited by TJM | 80 | A | |||
| VSD | Source-Drain Diode, IF = IS, VGS = 0V, Note 1 | 1.5 | V | |||
| trr | Source-Drain Diode, IF = 10A, -di/dt = 100A/µs, VR = 100V, VGS = 0V | 300 | ns | |||
| QRM | Source-Drain Diode, IF = 10A, -di/dt = 100A/µs, VR = 100V, VGS = 0V | 840 | nC | |||
| IRM | Source-Drain Diode, IF = 10A, -di/dt = 100A/µs, VR = 100V, VGS = 0V | 9 | A |
Features
- Fast Intrinsic Diode
- Dynamic dv/dt Rating
- Avalanche Rated
- Low RDS(ON) and QG
- Low Package Inductance
Advantages
- High Power Density
- Easy to Mount
- Space Savings
Applications
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- Discharger Circuits in Lasers Pulsers, Spark Igniters, RF Generators
- High Voltage Pulse Power Supplies
- AC and DC Motor Drives
- High Speed Power Switching Application
2404191531_Littelfuse-IXFK20N120P_C6577953.pdf
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