High Speed Power MOSFET Littelfuse IXFK20N120P Featuring Low Gate Charge and Avalanche Energy Rating

Key Attributes
Model Number: IXFK20N120P
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
20A
RDS(on):
570mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
6.5V
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
11.1nF@25V
Pd - Power Dissipation:
780W
Gate Charge(Qg):
193nC@10V
Mfr. Part #:
IXFK20N120P
Package:
TO-264AA
Product Description

Product Overview

The IXFK20N120P and IXFX20N120P are N-Channel Enhancement Mode PolarTM HiPerFETTM Power MOSFETs featuring fast intrinsic diodes, dynamic dv/dt rating, avalanche rating, low RDS(ON) and QG, and low package inductance. These MOSFETs offer high power density, are easy to mount, and provide space savings, making them suitable for a wide range of high-voltage and high-speed power switching applications.

Product Attributes

  • Brand: IXYS
  • Origin: USA (implied by US patents)
  • Certifications: Covered by multiple US patents.

Technical Specifications

SymbolTest ConditionsCharacteristic Values (TJ = 25C Unless Otherwise Specified)Min.Typ.Max.Unit
VDSSTJ = 25C to 150C1200V
TJ = 25C to 150C, RGS = 1M1200V
VGSSContinuous±30V
Transient±40V
ID25TC = 25C20A
TC = 25C, Pulse Width Limited by TJM50A
IATC = 25C10A
EASTC = 25C1J
dv/dtIS IDM, VDD VDSS, TJ 150C15V/ns
PDTC = 25C780W
TJ-55+150C
TJM150C
Tstg-55+150C
TLMaximum Lead Temperature for Soldering300C
TSOLD1.6 mm (0.062in.) from Case for 10s260C
MdMounting Torque (TO-264)1.13/10Nm/lb.in
FCMounting Force (PLUS247)20..120N/lb
WeightTO-26410g
WeightPLUS2476g
BVDSSVGS = 0V, ID = 1mA1200V
VGS(th)VDS = VGS, ID = 1mA3.56.5V
IGSSVGS = ±30V, VDS = 0V±200nA
IDSSVDS = VDSS, VGS = 0V50µA
TJ = 125C5mA
RDS(on)VGS = 10V, ID = 0.5 ID25, Note 1570
gfsVDS = 20V, ID = 0.5 ID25, Note 11016S
CissVGS = 0V, VDS = 25V, f = 1MHz11.1nF
CossVGS = 0V, VDS = 25V, f = 1MHz600pF
CrssVGS = 0V, VDS = 25V, f = 1MHz60pF
RGiGate Input Resistance1.6Ω
td(on)Resistive Switching TimesVGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 (External)48ns
trResistive Switching TimesVGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 (External)45ns
td(off)Resistive Switching TimesVGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 (External)72ns
tfResistive Switching TimesVGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 (External)70ns
Qg(on)VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25193nC
QgsVGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID2574nC
QgdVGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID2585nC
RthJC0.16C/W
RthCS0.15C/W
ISSource-Drain Diode, VGS = 0V20A
ISMSource-Drain Diode, Repetitive, Pulse Width Limited by TJM80A
VSDSource-Drain Diode, IF = IS, VGS = 0V, Note 11.5V
trrSource-Drain Diode, IF = 10A, -di/dt = 100A/µs, VR = 100V, VGS = 0V300ns
QRMSource-Drain Diode, IF = 10A, -di/dt = 100A/µs, VR = 100V, VGS = 0V840nC
IRMSource-Drain Diode, IF = 10A, -di/dt = 100A/µs, VR = 100V, VGS = 0V9A

Features

  • Fast Intrinsic Diode
  • Dynamic dv/dt Rating
  • Avalanche Rated
  • Low RDS(ON) and QG
  • Low Package Inductance

Advantages

  • High Power Density
  • Easy to Mount
  • Space Savings

Applications

  • Switch-Mode and Resonant-Mode Power Supplies
  • DC-DC Converters
  • Discharger Circuits in Lasers Pulsers, Spark Igniters, RF Generators
  • High Voltage Pulse Power Supplies
  • AC and DC Motor Drives
  • High Speed Power Switching Application

2404191531_Littelfuse-IXFK20N120P_C6577953.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.