Power MOSFET Littelfuse IXFH26N50P3 Featuring Avalanche Rated N Channel Enhancement Mode and Low RDS
Key Attributes
Model Number:
IXFH26N50P3
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
26A
RDS(on):
250mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@4mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.22nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
IXFH26N50P3
Package:
TO-247
Product Description
Polar3TM HiperFETTM Power MOSFET - N-Channel Enhancement Mode
This high-performance N-Channel Enhancement Mode Power MOSFET features an Avalanche Rated design with a fast intrinsic rectifier. It offers low RDS(ON) and low Gate Charge (QG), along with low package inductance, providing high power density and space savings. Its advantages include ease of mounting. Ideal for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, AC/DC motor drives, robotics, and servo controls.
Product Attributes
- Brand: IXYS
- Technology: Polar3TM HiperFETTM
- Rectifier: Fast Intrinsic Rectifier
- Mode: N-Channel Enhancement Mode
- Rating: Avalanche Rated
Technical Specifications
| Model | VDSS (V) | ID25 (A) | RDS(on) (m) | VGS(th) (V) | PD (W) | TJ (C) | Tstg (C) | Weight (g) |
|---|---|---|---|---|---|---|---|---|
| IXFA26N50P3 | 500 | 26 | ≤ 250 | 3.0 - 5.0 | 500 | -55 to +150 | -55 to +150 | 2.5 |
| IXFP26N50P3 | 500 | 26 | ≤ 250 | 3.0 - 5.0 | 500 | -55 to +150 | -55 to +150 | 3.0 |
| IXFQ26N50P3 | 500 | 26 | ≤ 250 | 3.0 - 5.0 | 500 | -55 to +150 | -55 to +150 | 5.5 |
| IXFH26N50P3 | 500 | 26 | ≤ 250 | 3.0 - 5.0 | 500 | -55 to +150 | -55 to +150 | 6.0 |
Detailed Characteristics (TJ = 25C Unless Otherwise Specified)
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| BVDSS | VGS = 0V, ID = 1mA | 500 | V | ||
| VGS(th) | VDS = VGS, ID = 4mA | 3.0 | 5.0 | V | |
| IGSS | VGS = ±30V, VDS = 0V | ±100 | nA | ||
| IDSS | VDS = VDSS, VGS = 0V | 25 | μA | ||
| IDSS (TJ = 125C) | VDS = VDSS, VGS = 0V | 750 | μA | ||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 250 | mΩ | ||
| gfs | VDS = 20V, ID = 0.5 ID25, Note 1 | 14 | 23 | S | |
| RGi | Gate Input Resistance | 2.1 | Ω | ||
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 2220 | pF | ||
| Coss | |||||
| Crss | 280 | ||||
| Co(er) | Effective Output Capacitance | 108 | pF | ||
| Co(tr) | Time related | 185 | pF | ||
| td(on) | Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 3Ω (External) | 21 | ns | ||
| tr | |||||
| td(off) | |||||
| tf | |||||
| Qg(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 42 | nC | ||
| Qgs | |||||
| Qgd | 11 | ||||
| RthJC | 0.25 | °C/W | |||
| RthCS (TO-220) | 0.50 | °C/W | |||
| RthCS (TO-3P & TO-247) | 0.25 | °C/W |
Source-Drain Diode Characteristics (TJ = 25C Unless Otherwise Specified)
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| IS | VGS = 0V | 26 | A | ||
| ISM | Repetitive, pulse Width Limited by TJM | 104 | A | ||
| VSD | IF = IS, VGS = 0V, Note 1 | 1.4 | V | ||
| trr | IF = 13A, -di/dt = 100A/μs VR = 100V | 250 | ns | ||
| QRM | |||||
| IRM | 0.9 |
2407311402_Littelfuse-IXFH26N50P3_C27392227.pdf
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