Low Level Triggering Surface Mount Thyristor Littelfuse MCR8DCMT4G for Temperature and Speed Control
Key Attributes
Model Number:
MCR8DCMT4G
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
15uA
Voltage - On State(Vtm):
1.8V
Current - On State(It(RMS)):
8A
Peak Off - State Voltage(Vdrm):
600V
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
MCR8DCMT4G
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The MCR8DCM and MCR8DCN are surface mount thyristors designed for high volume, low cost, industrial and consumer applications. They feature a small size, passivated die for reliability, and low level triggering and holding characteristics. Available in two package styles, these devices are suitable for motor control, process control, and temperature, light, and speed control applications. They meet UL 94 V-0 flammability standards and offer high ESD ratings.
Product Attributes
- Brand: Littelfuse
- Certifications: UL 94 V-0
- Lead Free Options Available
Technical Specifications
| Rating | Symbol | MCR8DCM | MCR8DCN | Unit | Notes |
| Peak Repetitive Off-State Voltage | VDRM, VRRM | 600 | 800 | V | 1 |
| On-State RMS Current | IT (RMS) | 8.0 | 8.0 | A | TC = 105C |
| Average On-State Current | IT(AV) | 5.1 | 5.1 | A | TC = 105C |
| Peak Non-Repetitive Surge Current | ITSM | 80 | 80 | A | 1/2 Cycle, 60 Hz, TJ = 110C |
| Circuit Fusing Consideration | I2t | 26 | 26 | Asec | t = 8.3 ms |
| Forward Peak Gate Power | PGM | 5.0 | 5.0 | W | Pulse Width 10 sec, TC = 105C |
| Forward Average Gate Power | PGM (AV) | 0.5 | 0.5 | W | t = 8.3 msec, TC = 105C |
| Forward Peak Gate Current | IGM | 2.0 | 2.0 | A | Pulse Width 1.0 sec, TC= 105C |
| Operating Junction Temperature Range | TJ | -40 to 125 | -40 to 125 | C | |
| Storage Temperature Range | Tstg | -40 to 150 | -40 to 150 | C | |
| Thermal Resistance, Junction-to-Case | RJC | 2.2 | 2.2 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 88 | 88 | C/W | Surface mounted on minimum recommended pad size. |
| Thermal Resistance, Junction-to-Ambient | RJA | 80 | 80 | C/W | Note 2 |
| Maximum Device Temperature for Soldering | TL | 260 | 260 | C | Note 3 |
| Peak Repetitive Forward or Reverse Blocking Current | IDRM, IRRM | 0.01 | 0.01 | mA | VAK = Rated VDRM or VRRM, RGK = 1.0 k, TJ = 25C |
| Peak Repetitive Forward or Reverse Blocking Current | IDRM, IRRM | 5.0 | 5.0 | mA | VAK = Rated VDRM or VRRM, RGK = 1.0 k, TJ = 110C |
| Critical Rate of Rise of Off-State Voltage | dv/dt | 50 | 50 | V/s | VAK = Rated VDRM, Gate Open, TJ = 125C |
| Peak On-State Voltage | VTM | 1.8 | 1.8 | V | ITM = 16 A, Pulse Test |
| Gate Trigger Current (Continuous dc) | IGT | 7.0 | 7.0 | A | VAK = 12 Vdc, RL = 100 , TJ = 25C |
| Gate Trigger Current (Continuous dc) | IGT | 15 | 15 | A | VAK = 12 Vdc, RL = 100 , TJ = -40C |
| Gate Trigger Current (Continuous dc) | IGT | 30 | 30 | A | VAK = 12 Vdc, RL = 100 , TJ = 125C |
| Gate Trigger Voltage (Continuous dc) | VGT | 0.65 | 0.65 | V | VD = 12 V, RL = 100 , TJ = 25C |
| Gate Trigger Voltage (Continuous dc) | VGT | 1.0 | 1.0 | V | VD = 12 V, RL = 100 , TJ = -40C |
| Gate Trigger Voltage (Continuous dc) | VGT | 2.0 | 2.0 | V | VD = 12 V, RL = 100 , TJ = 125C |
| Holding Current | IH | 22 | 22 | mA | TJ = 25C |
| Holding Current | IH | 30 | 30 | mA | TJ = -40C |
| Holding Current | IH | 60 | 60 | mA | TJ = 125C |
| Latching Current | IL | 22 | 22 | mA | TJ = 25C |
| Latching Current | IL | 30 | 30 | mA | TJ = -40C |
| Latching Current | IL | 60 | 60 | mA | TJ = 125C |
2411261530_Littelfuse-MCR8DCMT4G_C151667.pdf
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