Avalanche Rated Power MOSFET Littelfuse IXFA72N30X3 for Robotics and Servo Control Applications
Key Attributes
Model Number:
IXFA72N30X3
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
72A
RDS(on):
19mΩ@10V,36A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
2pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
5.4nF@10V
Pd - Power Dissipation:
390W
Gate Charge(Qg):
340nC@10V
Mfr. Part #:
IXFA72N30X3
Package:
TO-263
Product Description
Product Overview
The IXFA72N30X3 is an N-Channel Enhancement Mode Avalanche Rated X3-Class HiPerFETTM Power MOSFET from IXYS. It features international standard packaging, low RDS(ON) and QG, avalanche rating, and low package inductance, offering high power density, easy mounting, and space savings. This MOSFET is suitable for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by patent information)
- Material: Not specified
- Color: Not specified
- Certifications: Covered by one or more U.S. patents.
Technical Specifications
| Symbol | Test Conditions | Characteristic | Min. | Typ. | Max. | Units |
| Electrical Characteristics | BVDSS VGS = 0V, ID = 250A | Breakdown Voltage | 300 | V | ||
| VGS(th) VDS = VGS, ID = 1.5mA | Gate Threshold Voltage | 2.5 | 4.5 | V | ||
| IGSS VGS = 20V, VDS = 0V | Gate Leakage Current | 100 | nA | |||
| IDSS VDS = VDSS, VGS = 0V | Drain Leakage Current | 5 | A | |||
| IDSS TJ = 125C | Drain Leakage Current | 750 | A | |||
| On-State Characteristics | RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 | Static Drain-Source On-Resistance | 19 | m | ||
| gfs VDS = 10V, ID = 0.5 ID25, Note 1 | Forward Transconductance | 36 | 60 | S | ||
| RGi | Gate Input Resistance | 1.7 | ||||
| Capacitance | Ciss VGS = 0V, VDS = 25V, f = 1MHz | Input Capacitance | 5400 | pF | ||
| Coss VGS = 0V, VDS = 25V, f = 1MHz | Output Capacitance | 800 | pF | |||
| Crss VGS = 0V, VDS = 25V, f = 1MHz | Reverse Transfer Capacitance | 2 | pF | |||
| Co(er) | Effective Output Capacitance | 310 | pF | |||
| Co(tr) | Energy related Output Capacitance | 1200 | pF | |||
| Switching Times | td(on) | Turn-on Delay Time | 22 | ns | ||
| tr | Turn-on Rise Time | 25 | ns | |||
| td(off) | Turn-off Delay Time | 86 | ns | |||
| tf | Turn-off Fall Time | 11 | ns | |||
| Gate Charge | Qg(on) VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | Total Gate Charge | 82 | nC | ||
| Qgs | Gate-Source Charge | 25 | nC | |||
| Qgd | Gate-Drain Charge | 25 | nC | |||
| Maximum Ratings | VDSS | Drain-Source Voltage | 300 | V | ||
| ID25 TC = 25C | Continuous Drain Current | 72 | A | |||
| IDM TC = 25C, Pulse Width Limited by TJM | Pulsed Drain Current | 150 | A | |||
| IA TC = 25C | Avalanche Current | 36 | A | |||
| PD TC = 25C | Power Dissipation | 390 | W | |||
| Source-Drain Diode | IS VGS = 0V | Continuous Source Current | 72 | A | ||
| ISM Repetitive, pulse Width Limited by TJM | Pulsed Source Current | 288 | A | |||
| VSD IF = IS, VGS = 0V, Note 1 | Forward Voltage Drop | 1.4 | V | |||
| RthJC | Thermal Resistance, Junction-to-Case | 0.32 | C/W |
2411212327_Littelfuse-IXFA72N30X3_C5773150.pdf
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