IXFP80N25X3 Power MOSFET Featuring Low Package Inductance for Switch Mode and Resonant Mode Supplies
Key Attributes
Model Number:
IXFP80N25X3
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@1.5mA
Type:
N-Channel
Pd - Power Dissipation:
390W
Gate Charge(Qg):
83nC@10V
Mfr. Part #:
IXFP80N25X3
Package:
TO-220
Product Description
IXFP80N25X3, IXFQ80N25X3, IXFH80N25X3 N-Channel Enhancement Mode Power MOSFETs
These X3-Class HiPerFETTM Power MOSFETs are designed for high-density, space-saving applications. They feature international standard packages, low RDS(ON) and QG, avalanche rating, and low package inductance, making them suitable for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.
Product Attributes
- Brand: IXYS
- Material: X3-Class HiPerFETTM
- Certifications: Covered by U.S. patents including 4,835,592, 4,860,072, 4,881,106, 5,017,508, 5,034,796, 5,049,961, 5,063,307, 5,187,117, 5,237,481, 5,381,025, 5,486,715, 6,162,665, 6,259,123B1, 6,306,728B1, 6,404,065B1, 6,534,343, 6,583,505, 6,683,344, 6,710,405B2, 6,710,463, 6,727,585, 6,759,692, 6,771,478B2, 7,005,734B2, 7,063,975B2, 7,071,537, 7,157,338B2.
- Origin: USA (implied by patent information and company origin)
Technical Specifications
| Symbol | Test Conditions | IXFP80N25X3 / IXFQ80N25X3 / IXFH80N25X3 | Unit |
| Main Characteristics | |||
| BVDSS | VGS = 0V, ID = 250A | 250 | V |
| VGS(th) | VDS = VGS, ID = 1.5mA | 2.5 - 4.5 | V |
| IGSS | VGS = 20V, VDS = 0V | 100 | nA |
| IDSS | VDS = VDSS, VGS = 0V | 5 (TJ=125C: 350) | A |
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 13 - 16 | m |
| ID25 | TC = 25C | 80 | A |
| IDM | TC = 25C, Pulse Width Limited by TJM | 220 | A |
| IA | TC = 25C | 40 | A |
| Maximum Ratings | |||
| VDSS | TJ = 25C to 150C | 250 | V |
| VDGR | TJ = 25C to 150C, RGS = 1M | 250 | V |
| VGSS Continuous | 20 | V | |
| VGSM Transient | 30 | V | |
| EAS | TC = 25C | 1.2 | J |
| dv/dt | IS IDM, VDD VDSS, TJ 150C | 20 | V/ns |
| PD | TC = 25C | 390 | W |
| TJ | -55 ... +150 | C | |
| TJM | 150 | C | |
| Tstg | -55 ... +150 | C | |
| TL Maximum Lead Temperature for Soldering | 300 | C | |
| TSOLD | 1.6 mm (0.062in.) from Case for 10s | 260 | C |
| Md Mounting Torque | 1.13 / 10 | Nm/lb.in | |
| Weight | TO-220 | 3.0 | g |
| Weight | TO-3P | 5.5 | g |
| Weight | TO-247 | 6.0 | g |
| Source-Drain Diode | |||
| IS | VGS = 0V | 80 | A |
| ISM | Repetitive, pulse Width Limited by TJM | 320 | A |
| VSD | IF = IS, VGS = 0V, Note 1 | 1.4 | V |
| trr | IF = 40A, -di/dt = 100A/s, VR = 100V | 120 | ns |
| QRM | 600 | nC | |
| IRM | 10 | A | |
| Other Characteristics | |||
| gfs | VDS = 10V, ID = 0.5 ID25, Note 1 | 38 - 64 | S |
| RGi Gate Input Resistance | 1.6 | ||
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 5430 | pF |
| Coss | 890 | pF | |
| Crss | 1.6 | pF | |
| Co(er) Effective Output Capacitance | VGS = 0V, VDS = 0.8 VDSS, f = 1MHz | 320 | pF |
| Co(tr) Time related Capacitance | VGS = 0V, VDS = 0.8 VDSS, f = 1MHz | 1410 | pF |
| td(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 5 (External) | 30 | ns |
| tr | 17 | ns | |
| td(off) | 65 | ns | |
| tf | 8 | ns | |
| Qg(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 83 | nC |
| Qgs | 27 | nC | |
| Qgd | 24 | nC | |
| RthJC | 0.32 | C/W | |
| RthCS | TO-220 | 0.50 | C/W |
| RthCS | TO-247 & TO-3P | 0.25 | C/W |
2411200042_Littelfuse-IXFP80N25X3_C6884383.pdf
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