Littelfuse IXYS MCD312-16IO1 Thyristor Diode Module Featuring Advanced Power Cycling and RoHS Compliance
Key Attributes
Model Number:
MCD312-16IO1
Product Custom Attributes
Holding Current (Ih):
150mA
Current - Gate Trigger(Igt):
150mA
Voltage - On State(Vtm):
-
Current - On State(It(RMS)):
520A
Peak Off - State Voltage(Vdrm):
1.6kV
Current - Surge(Itsm@f):
-
SCR Type:
1 SCR And 1 Diode
Operating Temperature:
-40℃~+140℃@(Tj)
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
MCD312-16IO1
Package:
Screw Terminals
Product Description
Product Overview
The MCD312-16io1 is a Phase leg Thyristor/Diode Module designed for various industrial applications. It features an international standard package with direct copper bonded Al2O3-ceramic and a copper base plate. The module offers planar passivated chips, keyed gate/cathode twin pins, and is RoHS compliant. Its advanced power cycling capabilities and isolated backside make it suitable for motor control, power converters, and heat control systems.
Product Attributes
- Brand: IXYS
- Backside: Isolated
- Certifications: RoHS compliant
- Package: International standard package, Industry standard outline
- Material: Direct copper bonded Al2O3-ceramic with copper base plate
- Base Plate: Copper internally DCB isolated
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Part Number | Symbol | Definition | Conditions | min. | typ. | max. | Unit |
| MCD312-16io1 | VDRM/VRRM | max. repetitive reverse/forward blocking voltage | TVJ = 25C | 1600 | V | ||
| IT(AV) | RMS forward current | TC = 125C, 180 sine | 520 | A | |||
| ITSM | max. forward surge current | t = 10 ms; (50 Hz), sine, TVJ = 45C | 8.82 | kA | |||
| It | value for fusing | t = 10 ms; (50 Hz), sine, TVJ = 45C | 447.4 | kAs | |||
| RthJC | thermal resistance junction to case | per thyristor | 0.04 | K/W | |||
| VGT | gate trigger voltage | IT = 500 mA, VD = 6 V, TVJ = 25C | 2 | V | |||
| IGT | gate trigger current | IT = 500 mA, VD = 6 V, TVJ = 25C | 150 | mA | |||
| VGD | gate non-trigger voltage | VD = VDRM, TVJ = 140C | 0.25 | V | |||
| IGD | gate non-trigger current | VD = VDRM, TVJ = 140C | 10 | mA | |||
| IL | latching current | TVJ = 140C | 200 | mA | |||
| IH | holding current | TVJ = 140C | 150 | mA | |||
| tq | turn-off time | di/dt = 10 A/s, dv/dt = 50 V/s, VD = VDRM, TVJ = 125C | 200 | s | |||
| Isolation Voltage | VISO | RMS, 50/60 Hz, t = 1 second | TC = 125C | 4800 | V~ | ||
| Diode | VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | 1600 | V | ||
| IFAV | average forward current | TC = 125C, 180 sine | 520 | A | |||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine, TVJ = 45C | 8.82 | kA | |||
| Module | Ptot | total power dissipation | TC = 25C | 960 | W | ||
| RthCK | thermal resistance case to heatsink | 0.04 | K/W |
2411261426_Littelfuse-IXYS-MCD312-16IO1_C3614018.pdf
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