High Current Fast Recovery Diode Littelfuse IXYS DSEI60-12A with Low Noise Switching Characteristics

Key Attributes
Model Number: DSEI60-12A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500A
Reverse Leakage Current (Ir):
220uA@1.2kV
Reverse Recovery Time (trr):
40ns
Operating Junction Temperature Range:
-40℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Pd - Power Dissipation:
189W
Voltage - Forward(Vf@If):
2.55V@60A
Current - Rectified:
52A
Mfr. Part #:
DSEI60-12A
Package:
TO-247-2
Product Description

Product Overview

The IXYS DSEI 60-12A is a Fast Recovery Epitaxial Diode (FRED) designed for high-frequency switching applications. It features a standard JEDEC TO-247 AD package with planar passivated chips, offering very short recovery times and extremely low switching losses. Its low reverse recovery current (IRM) values and soft recovery behavior make it suitable for use as an antiparallel diode, anti-saturation diode, snubber diode, and free-wheeling diode in various power electronics circuits. Advantages include high reliability, reduced protection circuit needs due to low voltage peaks, low noise switching, and lower operating temperatures or space savings due to reduced cooling requirements.

Product Attributes

  • Brand: IXYS
  • Package Type: JEDEC TO-247 AD
  • Chip Technology: Planar passivated
  • Certifications: Epoxy meets UL 94V-0

Technical Specifications

Symbol Test Conditions Characteristic Values Type Unit
VRSM 1200 V
VRRM 1200 V
IFRMS TVJ = TVJM 100 A
IFAVM
TC = 60 C; rectangular, d = 0.5
52 A
IFRM tP < 10 s; rep. rating, pulse width limited by TVJM 800 A
IFSM TVJ = 45 C; t = 10 ms (50 Hz), sine 500 A
t = 8.3 ms (60 Hz), sine 540 A
TVJ = 150 C; t = 10 ms (50 Hz), sine 450 A
t = 8.3 ms (60 Hz), sine 480 A
I2t TVJ = 45 C; t = 10 ms (50 Hz), sine 1250 A2s
t = 8.3 ms (60 Hz), sine 1200 A2s
TVJ = 150 C; t = 10 ms (50 Hz), sine 1000 A2s
t = 8.3 ms (60 Hz), sine 950 A2s
TVJ -40...+150 C
TVJM 150 C
Tstg -40...+150 C
Ptot TC = 25 C 189 W
Md Mounting torque 0.8...1.2 Nm
Weight 6 g
IR TVJ = 25 C; VR = VRRM 2.2 mA typ.
TVJ = 25 C; VR = 0.8 VRRM 0.5 mA typ.
TVJ = 125 C; VR = 0.8 VRRM 14 mA max.
VF IF = 60 A; TVJ = 150 C 2.0 V typ.
TVJ = 25 C 2.55 V typ.
VT0 For power-loss calculations only 1.65 V
rT TVJ = TVJM 8.3 m typ.
RthJC 0.66 K/W
RthCK 0.25 K/W
RthJA 35 K/W
trr IF = 1 A; -di/dt = 200 A/ s; VR = 30 V; TVJ = 25 C 40...60 ns
IRM VR = 540 V; IF = 60 A; -diF/dt = 480 A/ s 32...36 A
L TVJ = 100 C 0.05 H

Applications

  • Antiparallel diode for high frequency switching devices
  • Anti saturation diode
  • Snubber diode
  • Free wheeling diode in converters and motor control circuits
  • Rectifiers in switch mode power supplies (SMPS)
  • Inductive heating and melting
  • Uninterruptible power supplies (UPS)
  • Ultrasonic cleaners and welders

Dimensions (TO-247 AD)

Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 2.2 2.54 0.087 0.102

2410121943_Littelfuse-IXYS-DSEI60-12A_C426670.pdf

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