High Current Fast Recovery Diode Littelfuse IXYS DSEI60-12A with Low Noise Switching Characteristics
Product Overview
The IXYS DSEI 60-12A is a Fast Recovery Epitaxial Diode (FRED) designed for high-frequency switching applications. It features a standard JEDEC TO-247 AD package with planar passivated chips, offering very short recovery times and extremely low switching losses. Its low reverse recovery current (IRM) values and soft recovery behavior make it suitable for use as an antiparallel diode, anti-saturation diode, snubber diode, and free-wheeling diode in various power electronics circuits. Advantages include high reliability, reduced protection circuit needs due to low voltage peaks, low noise switching, and lower operating temperatures or space savings due to reduced cooling requirements.
Product Attributes
- Brand: IXYS
- Package Type: JEDEC TO-247 AD
- Chip Technology: Planar passivated
- Certifications: Epoxy meets UL 94V-0
Technical Specifications
| Symbol | Test Conditions | Characteristic Values | Type | Unit |
|---|---|---|---|---|
| VRSM | 1200 | V | ||
| VRRM | 1200 | V | ||
| IFRMS | TVJ = TVJM | 100 | A | |
| IFAVM | TC = 60 C; rectangular, d = 0.5 | 52 | A | |
| IFRM | tP < 10 s; rep. rating, pulse width limited by TVJM | 800 | A | |
| IFSM | TVJ = 45 C; t = 10 ms (50 Hz), sine | 500 | A | |
| t = 8.3 ms (60 Hz), sine | 540 | A | ||
| TVJ = 150 C; t = 10 ms (50 Hz), sine | 450 | A | ||
| t = 8.3 ms (60 Hz), sine | 480 | A | ||
| I2t | TVJ = 45 C; t = 10 ms (50 Hz), sine | 1250 | A2s | |
| t = 8.3 ms (60 Hz), sine | 1200 | A2s | ||
| TVJ = 150 C; t = 10 ms (50 Hz), sine | 1000 | A2s | ||
| t = 8.3 ms (60 Hz), sine | 950 | A2s | ||
| TVJ | -40...+150 | C | ||
| TVJM | 150 | C | ||
| Tstg | -40...+150 | C | ||
| Ptot | TC = 25 C | 189 | W | |
| Md | Mounting torque | 0.8...1.2 | Nm | |
| Weight | 6 | g | ||
| IR | TVJ = 25 C; VR = VRRM | 2.2 | mA | typ. |
| TVJ = 25 C; VR = 0.8 VRRM | 0.5 | mA | typ. | |
| TVJ = 125 C; VR = 0.8 VRRM | 14 | mA | max. | |
| VF | IF = 60 A; TVJ = 150 C | 2.0 | V | typ. |
| TVJ = 25 C | 2.55 | V | typ. | |
| VT0 | For power-loss calculations only | 1.65 | V | |
| rT | TVJ = TVJM | 8.3 | m | typ. |
| RthJC | 0.66 | K/W | ||
| RthCK | 0.25 | K/W | ||
| RthJA | 35 | K/W | ||
| trr | IF = 1 A; -di/dt = 200 A/ s; VR = 30 V; TVJ = 25 C | 40...60 | ns | |
| IRM | VR = 540 V; IF = 60 A; -diF/dt = 480 A/ s | 32...36 | A | |
| L | TVJ = 100 C | 0.05 | H |
Applications
- Antiparallel diode for high frequency switching devices
- Anti saturation diode
- Snubber diode
- Free wheeling diode in converters and motor control circuits
- Rectifiers in switch mode power supplies (SMPS)
- Inductive heating and melting
- Uninterruptible power supplies (UPS)
- Ultrasonic cleaners and welders
Dimensions (TO-247 AD)
| Dim. | Millimeter | Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 19.81 | 20.32 | 0.780 | 0.800 |
| B | 20.80 | 21.46 | 0.819 | 0.845 |
| C | 15.75 | 16.26 | 0.610 | 0.640 |
| D | 3.55 | 3.65 | 0.140 | 0.144 |
| E | 4.32 | 5.49 | 0.170 | 0.216 |
| F | 5.4 | 6.2 | 0.212 | 0.244 |
| G | 1.65 | 2.13 | 0.065 | 0.084 |
| H | - | 4.5 | - | 0.177 |
| J | 1.0 | 1.4 | 0.040 | 0.055 |
| K | 10.8 | 11.0 | 0.426 | 0.433 |
| L | 4.7 | 5.3 | 0.185 | 0.209 |
| M | 0.4 | 0.8 | 0.016 | 0.031 |
| N | 2.2 | 2.54 | 0.087 | 0.102 |
2410121943_Littelfuse-IXYS-DSEI60-12A_C426670.pdf
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