Power Routing MOSFET LRC LN2670TZHG 60V N Channel Featuring Low Thermal Resistance and Halogen Free
Key Attributes
Model Number:
LN2670TZHG
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@5V
Gate Threshold Voltage (Vgs(th)):
3.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
34pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
612pF@30V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
14.6nC@10V
Mfr. Part #:
LN2670TZHG
Package:
SOT-89
Product Description
Product Overview
The Leshan Radio Company LN2670TZHG is a 60V N-Channel Enhancement Mode MOSFET designed with low RDS(on) trench technology for fast switching speeds and low thermal impedance. This MOSFET is suitable for various power applications including Power Routing, DC/DC Conversion, and Motor Drives. The material of the product is Halogen Free and compliant with RoHS requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Halogen Free
- Compliance: RoHS
- Package Type: SOT89
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V | |
| Gate-to-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (TA = 25C) | ID | 18 | A | Pulse width limited by maximum junction temperature. |
| Continuous Drain Current (TA = 70C) | ID | 4.6 | A | Pulse width limited by maximum junction temperature. |
| Pulsed Drain Current | IDM | 60 | A | Note 1 |
| Total Device Dissipation | PD | 1.5 | W | |
| Thermal Resistance, Junction-to-Case | RJC | 35 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 85 | C/W | Note 2 |
| Thermal Resistance, Junction-to-Ambient | RJA | 163 | C/W | Note 3 |
| Junction and Storage Temperature | TJ, Tstg | -55+150 | C | |
| Avalanche Current (L=0.1mH) | IAS | 12 | A | |
| Avalanche Energy (L=0.1mH) | EAS | 7.2 | mJ | |
| Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) | V(BR)DSS | 60 | V | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | V | (VDS = VGS , ID = 250 uA) |
| Gate-Body Leakage | IGSS | 100 | nA | (VDS = 0 V, VGS = 20 V) |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | (VDS = 48 V, VGS = 0 V) |
| Drain-Source On-Resistance | RDS(on) | 14.6 | m | (VGS = 10 V, ID = 3A) |
| Drain-Source On-Resistance | RDS(on) | 34 | m | (VGS = 5 V, ID = 2A) |
| Total Gate Charge | Qg | 3.9 | nC | (VDS = 30 V, VGS = 10 V, ID = 3A) |
| Gate-Source Charge | Qgs | 1.2 | nC | (VDS = 30V, ID=1A,VGS = 10V) |
| Gate-Drain Charge | Qgd | 0.4 | nC | (VGS = 10 V, ID = 3A) |
| Turn-On Delay Time | td(on) | 10 | ns | (VDS = 30 V, VGS = 10 V, RG = 6 ) |
| Rise Time | tr | 12 | ns | (VDS = 30 V, VGS = 10 V, RG = 6 ) |
| Turn-Off Delay Time | td(off) | 20 | ns | (VDS = 30 V, VGS = 10 V, RG = 6 ) |
| Fall Time | tf | 6 | ns | (VDS = 30 V, VGS = 10 V, RG = 6 ) |
| Input Capacitance | Ciss | 612 | pF | (VDS = 30 V, VGS = 0 V, f = 1 MHz) |
| Output Capacitance | Coss | 85 | pF | (VDS = 30 V, VGS = 0 V, f = 1 MHz) |
| Reverse Transfer Capacitance | Crss | 15 | pF | (VDS = 30 V, VGS = 0 V, f = 1 MHz) |
| Gate Resistance | Rg | 1.4 | (VDS=0V ,VGS=0V, f=1.0MHz) |
Ordering Information:
- Device: LN2670TZHG
- Marking: 6N
- Shipping: 1000/Tape&Reel
Notes:
- Note 1: Pulse width limited by maximum junction temperature.
- Note 2: Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu.
- Note 3: Surface mounted on "30.0mm25.0mm1.6mm" FR4 ,1 oz Cu.
- Note 4: Pulse test: PW 300us duty cycle 2%.
2410010101_LRC-LN2670TZHG_C2857374.pdf
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