High voltage transistor LRC LMBT5401LT1G suitable for automotive and general electronic applications
Key Attributes
Model Number:
LMBT5401LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT5401LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT5401LT1G is a high voltage transistor from LESHAN RADIO COMPANY, LTD., designed for various electronic applications. It offers compliance with RoHS requirements and an 'S' prefix variant is available for automotive applications requiring AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Compliance: RoHS
- Variant: S-Prefix for Automotive (AEC-Q101 Qualified, PPAP Capable)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Conditions |
| Maximum Ratings | ||||
| CollectorEmitter Voltage | V CEO | 150 | Vdc | |
| CollectorBase Voltage | V CBO | 160 | Vdc | |
| EmitterBase Voltage | V EBO | 5.0 | Vdc | |
| Collector Current Continuous | I C | 500 | mAdc | |
| Thermal Characteristics | ||||
| Total Device Dissipation (FR-5 Board) | P D | 225 | mW | T A=25 C; Derate above 25C: 1.8 mW/C |
| Thermal Resistance, Junction to Ambient (FR-5 Board) | R JA | 556 | C/W | |
| Total Device Dissipation (Alumina Substrate) | P D | 300 | mW | T A = 25C; Derate above 25C: 2.4 mW/C |
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | R JA | 417 | C/W | |
| Junction and Storage Temperature | T J, Tstg | -55 to +150 | C | |
| Electrical Characteristics (T A = 25C unless otherwise noted) | ||||
| OFF Characteristics | ||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 150 | Vdc | I C = 1.0 mAdc, I B = 0 |
| CollectorBase Breakdown Voltage | V (BR)CBO | 160 | Vdc | I C = 100 Adc, I E = 0 |
| Emitter-BAse Breakdown Voltage | V(BR)EBO | 5.0 | Vdc | I E= 10Adc,I C=0 |
| Collector Cutoff Current | I CBO | 50 | nAdc | V CB = 120 Vdc, IE= 0 |
| Collector Cutoff Current | I CBO | 50 | Adc | V CB = 120 Vdc, IE= 0, T A=100 C |
| ON Characteristics | ||||
| DC Current Gain | hFE | 50 | I C = 1.0mAdc, V CE = 5.0 Vdc | |
| DC Current Gain | hFE | 60 to 240 | I C = 10 mAdc, V CE = 5.0 Vdc | |
| DC Current Gain | hFE | 50 | I C = 50 mAdc, V CE = 5.0 Vdc | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.2 | Vdc | I C = 10 mAdc, I B = 1.0 mAdc |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.5 | Vdc | I C = 50 mAdc, I B = 5.0 mAdc |
| BaseEmitter Saturation Voltage | VBE(sat) | 1.0 | Vdc | I C = 10 mAdc, I B = 1.0 mAdc |
| BaseEmitter Saturation Voltage | VBE(sat) | 1.0 | Vdc | I C = 50 mAdc, I B = 5.0 mAdc |
| Small-Signal Characteristics | ||||
| CurrentGain Bandwidth Product | f T | 100 to 300 | MHz | I C = 10 mAdc, V CE= 10 Vdc, f = 100 MHz |
| Output Capacitance | C obo | 6.0 | pF | VCB= 10 Vdc, I E = 0, f = 1.0 MHz |
| Small-Signal Current Gain | h fe | 40 to 200 | I C= 1.0mAdc, VCE = 10Vdc, f = 1.0 kHz | |
| Noise Figure | N F | 8.0 | dB | I C = 200 Adc, VCE= 5.0 Vdc, Rs=10, f = 1.0 kHz |
1809212131_LRC-LMBT5401LT1G_C57683.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
