12V P Channel Enhancement Mode MOSFET LRC LP2305DSLT1G with Ultra Low On Resistance and SOT 23 Package
Key Attributes
Model Number:
LP2305DSLT1G
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
68mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
800mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 P-Channel
Output Capacitance(Coss):
375pF
Input Capacitance(Ciss):
1.245nF
Pd - Power Dissipation:
1.1W
Mfr. Part #:
LP2305DSLT1G
Package:
SOT-23
Product Description
Product Overview
The S-LP2305DSLT1G is a 12V P-Channel Enhancement-Mode MOSFET from LESHAN RADIO COMPANY, LTD. Featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance, this surface mount device (SOT-23) offers fully characterized avalanche voltage and current, and improved shoot-through FOM. It is designed for simple drive requirements and comes in a small package outline, making it suitable for various electronic applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Product Line: S-LP2305DSLT1G
- Technology: Advanced trench process technology, High Density Cell Design
- Package Type: SOT 23 (TO236AB)
- Channel Type: P-Channel Enhancement-Mode
- Compliance: RoHS compliant material
- Automotive Qualification: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Key Performance Metrics | ||||||
| RDS(ON) | Vgs@-4.5V, Ids@ 3.5A | 68 | m | |||
| RDS(ON) | Vgs@-2.5V, Ids@ 3A | 81 | m | |||
| RDS(ON) | Vgs@-1.8V, Ids@ 2A | 118 | m | |||
| Maximum Ratings and Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | -4 | A | |||
| Pulsed Drain Current | IDM | -12 | A | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Total Device Dissipation | PD | FR5 Board, A = 25°C | 1100 | mW | ||
| Thermal Resistance Junction-ambient | Rthj-a | 110 | °C/W | |||
| Electrical Characteristics (TA = 25°C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -250uA | -12 | V | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -3.5A | 47.0 | 68.0 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS = -2.5V, ID = -3A | 55.0 | 81.0 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS = -1.8V, ID = -2A | 67.0 | 118.0 | m | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250uA | -0.45 | -0.8 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -12V, VGS = 0V | -1 | uA | ||
| Gate Body Leakage | IGSS | VGS = ±8V, VDS = 0V | ±100 | nA | ||
| Forward Transconductance | gfs | VDS = -5V, ID = -3.5A | 8.5 | S | ||
| Max. Diode Forward Current | IS | -1.6 | A | |||
| Diode Forward Voltage | VSD | IS = -1.2A, VGS = 0V | -1.2 | V | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 4V, VGS = 0, f = 1MHz | 1245 | pF | ||
| Output Capacitance | Coss | VDS = 4V, VGS = 0, f = 1MHz | 375 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 4V, VGS = 0, f = 1MHz | 210 | pF | ||
| Turn-On Time | td(on) | VDD = 4V, RL = 4, ID = 1.0A, VGEN = 4.5V | 13 | 20 | ns | |
| Turn-On Time | tr | VDD = 4V, RL = 4, ID = 1.0A, VGEN = 4.5V | 25 | 40 | ns | |
| Turn-Off Time | td(off) | ID = 1.0A, VGEN = 4.5V, RG = 6 | 55 | 80 | ns | |
| Turn-Off Time | tf | ID = 1.0A, VGEN = 4.5V, RG = 6 | 19 | 35 | ns | |
| On-State Drain Current | ID(on) | VDS = 5V, VGS = 4.5V | -6 | A | ||
| On-State Drain Current | ID(on) | VDS = 5V, VGS = 2.5V | -3 | A | ||
| On-State Drain Current | ID(on) | VDS = 5V, VGS = 1.8V | -1.6 | A | ||
| Package Dimensions (SOT-23) | ||||||
| Dimension | Symbol | Min (inch) | Max (inch) | Min (mm) | Max (mm) | |
| A | 0.1102 | 0.1197 | 2.80 | 3.04 | ||
| B | 0.0472 | 0.0551 | 1.20 | 1.40 | ||
| C | 0.0350 | 0.0440 | 0.89 | 1.11 | ||
| D | 0.0150 | 0.0200 | 0.37 | 0.50 | ||
| G | 0.0701 | 0.0807 | 1.78 | 2.04 | ||
| H | 0.0005 | 0.0040 | 0.013 | 0.100 | ||
| J | 0.0034 | 0.0070 | 0.085 | 0.177 | ||
| K | 0.0140 | 0.0285 | 0.35 | 0.69 | ||
| L | 0.0350 | 0.0401 | 0.89 | 1.02 | ||
| S | 0.0830 | 0.1039 | 2.10 | 2.64 | ||
| V | 0.0177 | 0.0236 | 0.45 | 0.60 | ||
| Ordering Information | ||||||
| Model | Device Marking | Quantity | Package | |||
| LP2305DSLT1G | S-LP2305DSLT1G | P5S | 3000/Tape&Reel | SOT-23 | ||
| LP2305DSLT3G | S-LP2305DSLT3G | P5S | 10000/Tape&Reel | SOT-23 | ||
1809051323_LRC-LP2305DSLT1G_C172435.pdf
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