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quality NPN Transistor LRC LBTN560Z4TZHG with High Collector Current Gain and Compliance to RoHS Standards factory
quality NPN Transistor LRC LBTN560Z4TZHG with High Collector Current Gain and Compliance to RoHS Standards factory

NPN Transistor LRC LBTN560Z4TZHG with High Collector Current Gain and Compliance to RoHS Standards

Key Attributes
Model Number: LBTN560Z4TZHG
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
130MHz
Type:
NPN
Current - Collector(Ic):
5.2A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBTN560Z4TZHG
Package:
SOT-223
Product Description

Product Overview

This NPN transistor offers low collector-emitter saturation voltage, high collector current capability, and high collector current gain, leading to high efficiency due to less heat generation and a smaller required PCB area. The S- prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. It complies with RoHS requirements and is Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified and PPAP capable (S- prefix)

Technical Specifications

ParameterSymbolLimitsUnitNotes
MAXIMUM RATINGS
Junction and Storage temperatureTJ,Tstg-55~+150C
EmitterBase VoltageVEBO5V
Collector Current ContinuousIC5.2A
Peak Collector Current (tp 1 ms)ICM10.4A
CollectorEmitter VoltageVCEO60V
CollectorBase VoltageVCBO60V
THERMAL CHARACTERISTICS
Total Device Dissipation, FR4 Board (@ TA = 25C)PD1WNote 1
Thermal Resistance, JunctiontoAmbientRJA125C/WNote 1
Thermal Resistance, JunctiontoCaseRJC30C/W
ELECTRICAL CHARACTERISTICS (Ta= 25C)
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 60V, IE = 0 A)ICBO-nATyp. 50, Max. 100
Collector Cutoff Current (VCB = 60V, IE = 0 A, Tj = 150 C)ICBO-ATyp. 300
Emitter CutOff Current (VEB = 5 V, IC = 0 A)IEBO-nATyp. 150, Max. 250
Collector-Emitter cutoff Current (VCE= 60V,IB=0)ICEO-AMax. 10
CollectorEmitter Breakdown Voltage (IC = 1 mA,IB = 0)VBR(CEO)60VMin.
CollectorBase Breakdown Voltage (IC = 100 A,IE = 0)VBR(CBO)60VMin.
EmitterBase Breakdown Voltage (IE = 100 A,IC = 0)VBR(EBO)5VMin.
ON CHARACTERISTICS (Note 2)
DC Current Gain (VCE = 2 V, IC = 0.5 A)HFE80Min.
DC Current Gain (VCE = 2 V, IC = 0.5 A)HFE120Typ.
DC Current Gain (VCE = 2 V, IC = 1 A)HFE105Typ.
DC Current Gain (VCE = 2 V, IC = 2 A)HFE70Typ.
DC Current Gain (VCE = 2 V, IC = 4 A)HFE35Typ.
DC Current Gain (VCE = 2 V, IC = 6 A)HFE25Typ.
CollectorEmitter Saturation Voltage (IC = 0.5 A, IB = 50 mA)VCE(sat)-VTyp. 0.82, Max. 1.05
CollectorEmitter Saturation Voltage (IC = 1 A, IB = 50 mA)VCE(sat)-VTyp. 0.9, Max. 1.2
CollectorEmitter Saturation Voltage (IC = 1 A, IB = 10 mA)VCE(sat)-VTyp. 0.94
CollectorEmitter Saturation Voltage (IC = 2 A, IB = 40 mA)VCE(sat)-VTyp. 0.75, Max. 0.85
CollectorEmitter Saturation Voltage (IC = 4 A, IB = 200 mA)VCE(sat)-VTyp. 0.75, Max. 0.85
CollectorEmitter Saturation Voltage (IC = 4 A, IB = 400 mA)VCE(sat)-VTyp. 0.75, Max. 0.85
CollectorEmitter Saturation Voltage (IC = 4 A, IB = 80 mA)VCE(sat)-VTyp. 0.94
CollectorEmitter Saturation Voltage (IC = 5.2 A, IB = 260 mA)VCE(sat)-VTyp. 0.75, Max. 0.85
BaseEmitter Saturation Voltage (IC = 1 A, IB = 100 mA)VBE(sat)-VTyp. 0.75, Max. 0.85
BaseEmitter Saturation Voltage (IC = 4 A, IB = 400 mA)VBE(sat)-VTyp. 0.75, Max. 0.85
Base-Emitter Turn-On Voltage (VCE = 2 V, IC = 2 A)VBE(on)-VTyp. 0.94
SMALLSIGNAL CHARACTERISTICS
Transitional Frequency (VCE = 10 V, IC = 100 mA ,f = 100 MHz)fT-MHzTyp. 195
Collector Capacitance (VCB = 10 V, IE = ie = 0 A,f = 1 MHz)Cc-pFTyp. 48, Max. 70
SWITCHING CHARACTERISTICS
Delay time (VCC = 12.5 V, IC = 3 A,IB(on)= 0.15 A,IB(off) = 0.15 A)td-nsTyp. 15
Rise timetr-nsTyp. 95
Turn-on timeton-nsTyp. 110
Storage timets-nsTyp. 360
Fall timetf-nsTyp. 130
Turn-off timetoff-nsTyp. 555

2212131830_LRC-LBTN560Z4TZHG_C5273334.pdf

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