High Frequency Switching Littelfuse IXYS DSEI20-12A Diode with Soft Recovery Behavior and Low Losses

Name: High Frequency Switching Littelfuse IXYS DSEI20-12A Diode with Soft Recovery Behavior and Low Losses
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: DSEI20-12A
Availability: InStock

Key Attributes

Model Number: DSEI20-12A

Product Custom Attributes

Non-Repetitive Peak Forward Surge Current:

130A

Reverse Leakage Current (Ir):

750uA@1.2kV

Reverse Recovery Time (trr):

40ns

Operating Junction Temperature Range:

-40℃~+150℃

Diode Configuration:

Independent

Voltage - DC Reverse (Vr) (Max):

1.2kV

Pd - Power Dissipation:

78W

Voltage - Forward(Vf@If):

2.15V@12A

Current - Rectified:

17A

Mfr. Part #:

DSEI20-12A

Package:

TO-220AC

Product Description

Product Overview

The DSEI 20-12A is a Fast Recovery Epitaxial Diode (FRED) designed for high-frequency switching applications. It features a glass-passivated chip in an international standard TO-220 package, offering very short recovery times and extremely low losses at high switching frequencies. Its soft recovery behavior and low reverse recovery current (IRM) values contribute to high reliability circuit operation, reduced protection circuit needs, and low noise switching. This diode is ideal for use as an antiparallel diode for high-frequency switching devices, anti-saturation diode, snubber diode, and free-wheeling diode in various power electronics applications.

Product Attributes

Brand: IXYS
Package Type: TO-220
Chip Technology: Glass passivated
Certifications: Epoxy meets UL 94V-0
Recovery Behavior: Soft recovery

Technical Specifications

Symbol	Test Conditions	Type	Value	Unit
V_RSM		V	1200	V
V_RRM		V	1200	V
I_FRMS	T_VJ = T_VJM		70	A
I_FAVM	TC = 85 C; rectangular, d = 0.5		17	A
I_FRM	t_P < 10 s; rep. rating, pulse width limited by T_VJM		220	A
I_FSM	T_VJ = 45 C; t = 10 ms (50 Hz), sine		130	A
I_FSM	t = 8.3 ms (60 Hz), sine		140	A
I_FSM	T_VJ = 150 C; t = 10 ms (50 Hz), sine		110	A
I_FSM	t = 8.3 ms (60 Hz), sine		120	A
I²t	T_VJ = 45 C; t = 10 ms (50 Hz), sine		85	As
I²t	t = 8.3 ms (60 Hz), sine		80	As
I²t	T_VJ = 150 C; t = 10 ms (50 Hz), sine		60	As
I²t	t = 8.3 ms (60 Hz), sine		60	As
T_VJ			-40...+150	C
T_VJM			150	C
T_stg			-40...+150	C
P_tot	TC = 25 C		78	W
M_d	Mounting torque		0.4...0.6	Nm
Weight			2	g
I_R	T_VJ = 25 C; V_R = V_RRM	typ.	750	A
I_R	T_VJ = 25 C; V_R = 0.8 V_RRM		250	A
I_R	T_VJ = 125 C; V_R = 0.8 V_RRM		7	mA
V_F	I_F = 12 A; T_VJ = 150 C		1.87	V
V_F	T_VJ = 25 C		2.15	V
V_T0	For power-loss calculations only		1.65	V
r_T	T_VJ = T_VJM		18.2	m
R_thJC			1.6	K/W
R_thJA			60	K/W
t_rr	I_F = 1 A; -di/dt = 100 A/ s; V_R = 30 V; T_VJ = 25 C	typ.	40	ns
t_rr		max.	60	ns
I_RM	V_R = 540 V; I_F = 20 A; -di_F/dt = 100 A/ s	typ.	7	A
L	0.05 H; T_VJ = 100 C

Features

International standard package
Glass passivated chips
Very short recovery time
Extremely low losses at high switching frequencies
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0

Applications

Antiparallel diode for high frequency switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters and motor control circuits
Rectifiers in switch mode power supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders

Advantages

High reliability circuit operation
Low voltage peaks for reduced protection circuits
Low noise switching
Low losses
Operating at lower temperature or space saving by reduced cooling

2410010131_Littelfuse-IXYS-DSEI20-12A_C461305.pdf

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