Small Signal N Channel MOSFET LRC SRK7002LT1G Offering Fast Switching and ESD Protection up to 2000V

Key Attributes
Model Number: SRK7002LT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
7.5Ω@10V,0.5A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
225mW
Mfr. Part #:
SRK7002LT1G
Package:
SOT-23
Product Description

Product Overview

The SRK7002LT1G and S-SRK7002LT1G are N-Channel Small Signal MOSFETs designed for efficient power management. These devices offer low on-resistance, fast switching speeds, and low-voltage drive capabilities, making them suitable for easily designed drive circuits. They are also easy to parallel and feature ESD protection up to 2000V. The S-prefix variant is qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capabilities. The material complies with RoHS requirements and is Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Type: N-Channel Small Signal MOSFET
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix models)
  • ESD Protection: 2000V

Technical Specifications

Characteristic Symbol Min. Typ. Max. Unit Notes
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 0.8 A When mounted on a 10.750.062 inch glass epoxy board.
Pulsed Drain Current IDP 225 mA Pw10s, Duty cycle1%
Continuous Drain Reverse Current IDR 0.8 A
Pulsed Drain Reverse Current IDRP 225 mA Pw10s, Duty cycle1%
Total Power Dissipation PD 150 mW Note 2
Channel Temperature Tch -55 150
Storage Temperature Tstg -55 150
Gate-source leakage current IGSS 10 A (VGS =20V, VDS =0V)
Drain-source breakdown voltage V(BR)DSS 60 V (ID =10A, VGS =0V)
Zero gate voltage drain current IDSS 25 A (VDS =60V, VGS =0V)
Gate threshold voltage VGS(th) 1 1.85 2.5 V (VDS =VGS, ID =250A)
Drain-source on-state resistance RDS(on) 7.5 10 (ID =0.05A, VGS =5V)
Drain-source on-state resistance RDS(on) 1 (ID =0.5A, VGS =10V)
Forward transfer admittance Yfs 3.5 mS (VDS =10V, ID =0.2A)
Input capacitance Ciss 50 pF (VDS =25V,VGS =0V,f=1MHz)
Output Capacitance Coss 10 pF (VDS =25V,VGS =0V,f=1MHz)
Reverse Transfer Capacitance Crss 3 pF (VDS =25V,VGS =0V,f=1MHz)
Turn-On Delay Time td(on) 40 ns (ID =200mA, VDD =30V,VGS =10V,RL =150 ,RGS =10)
Turn-Off Delay Time td(off) 80 ns (ID =200mA, VDD =30V,VGS =10V,RL =150 ,RGS =10)
Model Device Marking Shipping Package
SRK7002LT1G RK 3000/Tape&Reel SOT23(TO-236)
SRK7002LT3G RK 10000/Tape&Reel SOT23(TO-236)
S-SRK7002LT1G RK 3000/Tape&Reel SOT23(TO-236)

Dimensions (SOT23-TO-236)

Dimension Min. (mm) Nom. (mm) Max. (mm) Min. (in) Nom. (in) Max. (in)
A 0.37 0.44 0.51 0.015 0.017 0.020
A1 0.013 0.06 0.10 0.0005 0.002 0.004
b 0.28 0.32 0.36 0.011 0.013 0.014
c 0.10 0.15 0.20 0.004 0.006 0.008
D 2.80 2.90 3.04 0.110 0.114 0.120
E 2.60 2.70 2.80 0.102 0.106 0.110
e 0.95 0.037
HE 1.11 1.21 1.31 0.044 0.048 0.052
L 0.35 0.40 0.54 0.014 0.016 0.021
L1 0.10 0.004
0 10 0 10

Soldering Footprint (SOT23-TO-236)

Dimension MIN (mm) NOM (mm) MAX (mm) MIN (inch) NOM (inch) MAX (inch)
1 0.09 0.1 0.11 0.004 0.004 0.004
2 1.78 1.9 2.04 0.070 0.075 0.080
3 0.44 0.5 0.54 0.017 0.020 0.021

1912111437_LRC-SRK7002LT1G_C417308.pdf

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