Small Signal N Channel MOSFET LRC SRK7002LT1G Offering Fast Switching and ESD Protection up to 2000V
Product Overview
The SRK7002LT1G and S-SRK7002LT1G are N-Channel Small Signal MOSFETs designed for efficient power management. These devices offer low on-resistance, fast switching speeds, and low-voltage drive capabilities, making them suitable for easily designed drive circuits. They are also easy to parallel and feature ESD protection up to 2000V. The S-prefix variant is qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capabilities. The material complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Type: N-Channel Small Signal MOSFET
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix models)
- ESD Protection: 2000V
Technical Specifications
| Characteristic | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 0.8 | A | When mounted on a 10.750.062 inch glass epoxy board. | ||
| Pulsed Drain Current | IDP | 225 | mA | Pw10s, Duty cycle1% | ||
| Continuous Drain Reverse Current | IDR | 0.8 | A | |||
| Pulsed Drain Reverse Current | IDRP | 225 | mA | Pw10s, Duty cycle1% | ||
| Total Power Dissipation | PD | 150 | mW | Note 2 | ||
| Channel Temperature | Tch | -55 | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | |||
| Gate-source leakage current | IGSS | 10 | A | (VGS =20V, VDS =0V) | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | (ID =10A, VGS =0V) | ||
| Zero gate voltage drain current | IDSS | 25 | A | (VDS =60V, VGS =0V) | ||
| Gate threshold voltage | VGS(th) | 1 | 1.85 | 2.5 | V | (VDS =VGS, ID =250A) |
| Drain-source on-state resistance | RDS(on) | 7.5 | 10 | (ID =0.05A, VGS =5V) | ||
| Drain-source on-state resistance | RDS(on) | 1 | (ID =0.5A, VGS =10V) | |||
| Forward transfer admittance | Yfs | 3.5 | mS | (VDS =10V, ID =0.2A) | ||
| Input capacitance | Ciss | 50 | pF | (VDS =25V,VGS =0V,f=1MHz) | ||
| Output Capacitance | Coss | 10 | pF | (VDS =25V,VGS =0V,f=1MHz) | ||
| Reverse Transfer Capacitance | Crss | 3 | pF | (VDS =25V,VGS =0V,f=1MHz) | ||
| Turn-On Delay Time | td(on) | 40 | ns | (ID =200mA, VDD =30V,VGS =10V,RL =150 ,RGS =10) | ||
| Turn-Off Delay Time | td(off) | 80 | ns | (ID =200mA, VDD =30V,VGS =10V,RL =150 ,RGS =10) |
| Model | Device Marking | Shipping | Package |
|---|---|---|---|
| SRK7002LT1G | RK | 3000/Tape&Reel | SOT23(TO-236) |
| SRK7002LT3G | RK | 10000/Tape&Reel | SOT23(TO-236) |
| S-SRK7002LT1G | RK | 3000/Tape&Reel | SOT23(TO-236) |
Dimensions (SOT23-TO-236)
| Dimension | Min. (mm) | Nom. (mm) | Max. (mm) | Min. (in) | Nom. (in) | Max. (in) |
|---|---|---|---|---|---|---|
| A | 0.37 | 0.44 | 0.51 | 0.015 | 0.017 | 0.020 |
| A1 | 0.013 | 0.06 | 0.10 | 0.0005 | 0.002 | 0.004 |
| b | 0.28 | 0.32 | 0.36 | 0.011 | 0.013 | 0.014 |
| c | 0.10 | 0.15 | 0.20 | 0.004 | 0.006 | 0.008 |
| D | 2.80 | 2.90 | 3.04 | 0.110 | 0.114 | 0.120 |
| E | 2.60 | 2.70 | 2.80 | 0.102 | 0.106 | 0.110 |
| e | 0.95 | 0.037 | ||||
| HE | 1.11 | 1.21 | 1.31 | 0.044 | 0.048 | 0.052 |
| L | 0.35 | 0.40 | 0.54 | 0.014 | 0.016 | 0.021 |
| L1 | 0.10 | 0.004 | ||||
| 0 | 10 | 0 | 10 |
Soldering Footprint (SOT23-TO-236)
| Dimension | MIN (mm) | NOM (mm) | MAX (mm) | MIN (inch) | NOM (inch) | MAX (inch) |
|---|---|---|---|---|---|---|
| 1 | 0.09 | 0.1 | 0.11 | 0.004 | 0.004 | 0.004 |
| 2 | 1.78 | 1.9 | 2.04 | 0.070 | 0.075 | 0.080 |
| 3 | 0.44 | 0.5 | 0.54 | 0.017 | 0.020 | 0.021 |
1912111437_LRC-SRK7002LT1G_C417308.pdf
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