Low noise amplifier transistor LRC L2SC3356LT1G suitable for CATV VHF and UHF band signal processing

Key Attributes
Model Number: L2SC3356LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
7GHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
L2SC3356LT1G
Package:
SOT-23
Product Description

Product Overview

The L2SC3356LT1 is an NPN silicon epitaxial transistor specifically engineered for low-noise amplifier applications across VHF, UHF, and CATV bands. It offers excellent dynamic range and favorable current characteristics, making it suitable for high-frequency amplification tasks.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS compliant
  • Marking: L2SC3356LT1G=R24, L2SC3356LT1G
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix variants)

Technical Specifications

CharacteristicSymbolMin.Typ.Max.UnitTest Conditions
Collector Cutoff CurrentICBO1.0μAVCB = 10 V, IE = 0
Emitter Cutoff CurrentIEBO1.0μAVEB = 1.0 V, IC = 0
DC Current GainhFE82170270VCE = 3 V, IC = 10 mA
Gain Bandwidth ProductfT7GHzVCE = 10 V, IC = 20 mA
Feed-Back CapacitanceCre**0.551.0pFVCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain|S21e|2211.5dBVCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise FigureNF1.12.0dBVCE = 10 V, IC = 7 mA, f = 1.0 GHz
Collector to Base VoltageVCBO20VAbsolute Maximum Ratings
Collector to Emitter VoltageVCEO12VAbsolute Maximum Ratings
Emitter to Base VoltageVEBO3.0VAbsolute Maximum Ratings
Collector CurrentIC100mAAbsolute Maximum Ratings
Total Power DissipationPT200mWAbsolute Maximum Ratings (TA = 25 °C)
Junction TemperatureTj150°CAbsolute Maximum Ratings
Storage TemperatureTstg-65+150°CAbsolute Maximum Ratings

1811021921_LRC-L2SC3356LT1G_C79253.pdf

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