Low noise amplifier transistor LRC L2SC3356LT1G suitable for CATV VHF and UHF band signal processing
Product Overview
The L2SC3356LT1 is an NPN silicon epitaxial transistor specifically engineered for low-noise amplifier applications across VHF, UHF, and CATV bands. It offers excellent dynamic range and favorable current characteristics, making it suitable for high-frequency amplification tasks.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS compliant
- Marking: L2SC3356LT1G=R24, L2SC3356LT1G
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix variants)
Technical Specifications
| Characteristic | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Collector Cutoff Current | ICBO | 1.0 | μA | VCB = 10 V, IE = 0 | ||
| Emitter Cutoff Current | IEBO | 1.0 | μA | VEB = 1.0 V, IC = 0 | ||
| DC Current Gain | hFE | 82 | 170 | 270 | VCE = 3 V, IC = 10 mA | |
| Gain Bandwidth Product | fT | 7 | GHz | VCE = 10 V, IC = 20 mA | ||
| Feed-Back Capacitance | Cre** | 0.55 | 1.0 | pF | VCB = 10 V, IE = 0, f = 1.0 MHz | |
| Insertion Power Gain | |S21e|2 | 2 | 11.5 | dB | VCE = 10 V, IC = 20 mA, f = 1.0 GHz | |
| Noise Figure | NF | 1.1 | 2.0 | dB | VCE = 10 V, IC = 7 mA, f = 1.0 GHz | |
| Collector to Base Voltage | VCBO | 20 | V | Absolute Maximum Ratings | ||
| Collector to Emitter Voltage | VCEO | 12 | V | Absolute Maximum Ratings | ||
| Emitter to Base Voltage | VEBO | 3.0 | V | Absolute Maximum Ratings | ||
| Collector Current | IC | 100 | mA | Absolute Maximum Ratings | ||
| Total Power Dissipation | PT | 200 | mW | Absolute Maximum Ratings (TA = 25 °C) | ||
| Junction Temperature | Tj | 150 | °C | Absolute Maximum Ratings | ||
| Storage Temperature | Tstg | -65 | +150 | °C | Absolute Maximum Ratings |
1811021921_LRC-L2SC3356LT1G_C79253.pdf
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