Silicon epitaxial transistor LRC L2SC3356WT1G designed for low noise and high frequency VHF UHF CATV

Key Attributes
Model Number: L2SC3356WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
7GHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
L2SC3356WT1G
Package:
SC-70-3
Product Description

Product Overview

The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier applications in the VHF, UHF, and CATV bands. It offers excellent dynamic range and current characteristics, making it suitable for high-frequency amplification tasks.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements
  • Package Type: SC-70
  • Automotive Qualification: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)

Technical Specifications

CharacteristicSymbolMin.Typ.Max.UnitTest Conditions
Collector Cutoff CurrentICBO1.0μAVCB = 10 V, IE = 0
Emitter Cutoff CurrentIEBO1.0μAVEB = 1.0 V, IC = 0
DC Current GainhFE82170270VCE = 3 V, IC = 10 mA
Gain Bandwidth ProductfT7GHzVCE = 10 V, IC = 20 mA
Feed-Back CapacitanceCre**0.551.0pFVCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain|S21e|2211.5dBVCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise FigureNF1.12.0dBVCE = 10 V, IC = 7 mA, f = 1.0 GHz

Absolute Maximum Ratings

RatingSymbolValueUnitConditions
Collector to Base VoltageVCBO20VTA = 25 °C
Collector to Emitter VoltageVCEO12VTA = 25 °C
Emitter to Base VoltageVEBO3.0VTA = 25 °C
Collector CurrentIC100mATA = 25 °C
Total Power DissipationPT150mWTA = 25 °C
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to +150°C

Ordering Information

Device MarkingShippingPackage
L2SC3356WT1G3000/Tape & ReelSC-70
S-L2SC3356WT1G10000/Tape & ReelSC-70
S-L2SC3356WT3GSC-70

1809091713_LRC-L2SC3356WT1G_C85159.pdf

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