Compact dual transistor device LRC LMBT3906DW1T1G for amplifier circuits in six lead SOT363 package
Key Attributes
Model Number:
LMBT3906DW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT3906DW1T1G
Package:
SOT-363
Product Description
Product Overview
The LMBT3906DW1T1 device is a spin-off of the popular SOT-23/SOT-323 three-leaded device, designed for general-purpose amplifier applications. It is housed in a SOT-363 six-leaded surface mount package. By integrating two discrete devices into a single package, this device is ideal for low-power surface mount applications where board space is at a premium, simplifying circuit design, reducing board space, and lowering component count.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Device Marking: A2
- Shipping: 3000 Units/Reel
- Material Compliance: RoHS
Technical Specifications
| Characteristic | Symbol | Min | Max | Unit | Notes |
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | VCEO | 40 | Vdc | ||
| CollectorBase Voltage | VCBO | 40 | Vdc | ||
| EmitterBase Voltage | VEBO | 5.0 | Vdc | ||
| Collector Current Continuous | IC | 200 | mAdc | ||
| Total Package Dissipation | PD | 150 | mW | TA = 25C, Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. | |
| Thermal Resistance Junction to Ambient | RJA | 833 | C/W | ||
| Junction and Storage Temperature Range | TJ, Tstg | 55 | +150 | C | |
| ELECTRICAL CHARACTERISTICS | |||||
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 40 | Vdc | (2) | |
| CollectorBase Breakdown Voltage | V(BR)CBO | 40 | Vdc | ||
| EmitterBase Breakdown Voltage | V(BR)EBO | 5.0 | Vdc | ||
| Base Cutoff Current | IBL | 50 | nAdc | (I C = 1.0 mAdc, I B = 0) | |
| Collector Cutoff Current | ICEX | 50 | nAdc | (I C = 10 Adc, I E = 0) | |
| DC Current Gain | hFE | 60 | 300 | (IC = 0.1 mAdc, VCE = 1.0 Vdc) | |
| DC Current Gain | hFE | 80 | 300 | (IC = 1.0 mAdc, VCE = 1.0 Vdc) | |
| DC Current Gain | hFE | 100 | 300 | (IC = 10 mAdc, VCE = 1.0 Vdc) | |
| DC Current Gain | hFE | 60 | 300 | (IC = 50 mAdc, VCE = 1.0 Vdc) | |
| DC Current Gain | hFE | 30 | 300 | (IC = 100 mAdc, VCE = 1.0 Vdc) | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.4 | Vdc | (IC = 50 mAdc, IB = 5.0 mAdc) | |
| BaseEmitter Saturation Voltage | VBE(sat) | 0.85 | 0.95 | Vdc | (IC = 50 mAdc, IB = 5.0 mAdc) |
| CurrentGain Bandwidth Product | fT | 250 | MHz | ||
| Output Capacitance | Cobo | 4.5 | pF | ||
| Input Capacitance | Cibo | 10 | pF | ||
| Input Impedance | hie | 2.0 | 12 | k | (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) |
| Voltage Feedback Ratio | hre | 0.1 | 10 X 104 | (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) | |
| SmallSignal Current Gain | hfe | 100 | 400 | (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) | |
| Output Admittance | hoe | 3.0 | 60 | mhos | (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) |
| Noise Figure | NF | 4.0 | dB | (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k , f = 1.0 kHz) | |
| Delay Time | td | 35 | ns | (VCC = 3.0 Vdc, VBE = 0.5 Vdc) | |
| Rise Time | tr | 35 | ns | (IC = 10 mAdc, IB1 = 1.0 mAdc) | |
| Storage Time | ts | 225 | ns | (VCC = 3.0 Vdc, IC = 10 mAdc) | |
| Fall Time | tf | 75 | ns | (IB1 = IB2 = 1.0 mAdc) | |
Notes:
2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
1806151240_LRC-LMBT3906DW1T1G_C13962.pdf
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