Compact Power MOSFET LRC LP3415ELT1G P Channel Device Featuring Trench Process and Low On Resistance
Key Attributes
Model Number:
LP3415ELT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15.17pF@10V
Number:
1 P-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
36.45pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
5.97nC@4.5V
Mfr. Part #:
LP3415ELT1G
Package:
SOT-23
Product Description
Product Overview
The S-LP3415ELT1G is a P-Channel Enhancement-Mode MOSFET from LESHAN RADIO COMPANY, LTD., designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. Packaged in a small outline SOT-23 (TO-236AB) surface mount device, it is suitable for various applications requiring efficient power switching. This device is AEC-Q101 Qualified and PPAP Capable when designated with the 'S-' prefix for automotive and other demanding applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT-23 (TO-236AB)
- Technology: Advanced trench process technology, High Density Cell Design
- Compliance: RoHS requirements
- Qualification: AEC-Q101 Qualified (with 'S-' prefix)
- PPAP Capable: Yes (with 'S-' prefix)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings and Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | TA = 25°C | -4 | A | ||
| Continuous Drain Current | ID | TA = 75°C | 0.6 | A | ||
| Pulsed Drain Current | IDM | 1) | -30 | A | ||
| Maximum Power Dissipation | PD | 2.0 | W | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 2) PCB mounted, 1-in² 2oz Cu PCB board | 150 | °C/W | ||
| Junction-to-Case Thermal Resistance | RθJC | 2. | °C/W | |||
| Electrical Characteristics (TA = 25°C unless otherwise noted) | ||||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -250uA | -20 | V | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -4A | 60 | mΩ | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -2.5V, ID = -4A | 75 | mΩ | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -1.8V, ID = -2A | 85.0 | mΩ | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID = -250uA | -0.3 | -1 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -16V, VGS = 0V | -1 | µA | ||
| Gate Body Leakage | IGSS | VGS = ±8V, VDS = 0V | ±10 | µA | ||
| Gate Resistance | Rg | VDS = 0V, f = 1.0MHz | 6.5 | Ω | ||
| Dynamic Characteristics 3) | ||||||
| Total Gate Charge | Qg | VDS = -10V, ID = -4A, VGS = -4.5V | 4.59 | 5.97 | nC | |
| Gate-Source Charge | Qgs | 2.14 | 2.78 | nC | ||
| Gate-Drain Charge | Qgd | 2.51 | 3.26 | nC | ||
| Turn-On Delay Time | td(on) | VDD = -10V, RL = 2.5Ω, ID = -1A, VGEN = -4.5V, RG = 3Ω | 965.2 | 1930.4 | ns | |
| Turn-On Rise Time | tr | 1604 | 3208 | ns | ||
| Turn-Off Delay Time | td(off) | 7716 | 15432 | ns | ||
| Turn-Off Fall Time | tf | 3452 | 6904 | ns | ||
| Input Capacitance | Ciss | VDS = -10V, VGS = 0V, f = 1.0 MHz | 36.45 | pF | ||
| Output Capacitance | Coss | 128.57 | pF | |||
| Reverse Transfer Capacitance | Crss | 15.17 | pF | |||
| Source-Drain Diode | ||||||
| Max. Diode Forward Current | IS | -2.2 | A | |||
| Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1 | V | ||
| Dimensions (SOT-23) | ||||||
| Dimension | Symbol | Unit | Min | Max | Min | Max |
| A | inches | 0.1102 | 0.1197 | 2.80 | 3.04 | |
| B | inches | 0.0472 | 0.0551 | 1.20 | 1.40 | |
| C | inches | 0.0350 | 0.0440 | 0.89 | 1.11 | |
| D | inches | 0.0150 | 0.0200 | 0.37 | 0.50 | |
| G | inches | 0.0701 | 0.0807 | 1.78 | 2.04 | |
| H | inches | 0.0005 | 0.0040 | 0.013 | 0.100 | |
| J | inches | 0.0034 | 0.0070 | 0.085 | 0.177 | |
| K | inches | 0.0140 | 0.0285 | 0.35 | 0.69 | |
| L | inches | 0.0350 | 0.0401 | 0.89 | 1.02 | |
| S | inches | 0.0830 | 0.1039 | 2.10 | 2.64 | |
| V | inches | 0.0177 | 0.0236 | 0.45 | 0.60 | |
| Ordering Information | ||||||
| Model | Marking | Shipping | ||||
| LP3415ELT1G | P15 | 3000/Tape & Reel | ||||
| LP3415ELT3G | P15 | 10000/Tape & Reel | ||||
| S-LP3415ELT1G | ||||||
| S-LP3415ELT3G | ||||||
Notes:
1. Repetitive Rating: Pulse width limited by the Maximum junction temperature.
2. Guaranteed by design; not subject to production testing.
3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. Guaranteed by design; not subject to production testing.
1809071727_LRC-LP3415ELT1G_C176901.pdf
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