Littelfuse IXYS DH60-18A diode featuring fast recovery and avalanche voltage rating for high frequency
Key Attributes
Model Number:
DH60-18A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
700A
Reverse Leakage Current (Ir):
200uA@1.8kV
Reverse Recovery Time (trr):
230ns
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
1.8kV
Pd - Power Dissipation:
415W
Voltage - Forward(Vf@If):
2.04V@60A
Current - Rectified:
60A
Mfr. Part #:
DH60-18A
Package:
TO-247
Product Description
Product Overview
The DH60-18A is a high-performance, fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, significantly short recovery times, and improved thermal behavior. Its very low Irm-values and soft reverse recovery contribute to reduced power dissipation and turn-on losses in commutating switches, minimizing EMI/RFI. This diode is avalanche voltage rated for reliable operation and is ideal for use as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode. It is also suitable for rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Part Number: DH60-18A
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Package: TO-247
- Backside Marking: Cathode
Technical Specifications
| Symbol | Definition | Conditions | Unit | typ. | max. | min. |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | 1800 | ||
| VRSM | max. non-repetitive reverse blocking voltage | TVJ = 25C | V | 2000 | ||
| IF(AV) | average forward current | TC = 100C | A | 60 | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | A | 1800 | ||
| VF0 | threshold voltage | V | 1.28 | |||
| rF | slope resistance for power loss calculation only | m | 12 | |||
| Ptot | total power dissipation | TC = 25C | W | 415 | ||
| RthJC | thermal resistance junction to case | K/W | 0.3 | |||
| RthCH | thermal resistance case to heatsink | K/W | 0.3 | |||
| TVJ | virtual junction temperature | C | 150 | -55 | ||
| Tstg | storage temperature | C | 150 | -55 | ||
| IRMS | RMS current per terminal | A | 70 | |||
| CJ | junction capacitance | VR = 1200 V; f = 1 MHz; TVJ = 25C | pF | 32 | ||
| FAV | average forward current | Rectangular 0.5 | A | 1800 | ||
| trr | reverse recovery time | IF = 60 A; -diF/dt = 800 A/s; VR = 1200 V; TVJ = 100C | ns | 230 | 350 | |
| IRM | max. reverse recovery current | IF = 60 A; -diF/dt = 800 A/s; VR = 1200 V; TVJ = 100C | A | 70 | ||
| VF | forward voltage drop | IF = 60 A; TVJ = 25C | V | 2.04 | 2.57 | |
| VF | forward voltage drop | IF = 120 A; TVJ = 150C | V | 2.03 | 2.73 |
2410121912_Littelfuse-IXYS-DH60-18A_C2798152.pdf
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