P Channel Power MOSFET 60V LRC LBSS84ELT1G RoHS Compliant Pb Free Package for Portable Devices
Key Attributes
Model Number:
LBSS84ELT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130mA
RDS(on):
6Ω@5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.5pF
Number:
1 P-Channel
Output Capacitance(Coss):
4pF
Input Capacitance(Ciss):
45pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
1.1nC@4.5V
Mfr. Part #:
LBSS84ELT1G
Package:
SOT-23
Product Description
Product Overview
This P-Channel Power MOSFET is designed for high-speed switching applications. It features an advanced trench cell design and is ESD protected. Available in a Pb-Free package, this device complies with RoHS requirements and is Halogen Free. The 'S-' prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. Ideal for portable appliances and load switch applications.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S- prefix models)
- Package Type: Pb-Free Package
Technical Specifications
| Model | Device Marking | Description | Drain-Source Voltage (VDSS) | Gate-Source Voltage (VGSS) | Continuous Drain Current (ID) | Pulsed Drain Current (IDM) | Total Device Dissipation (PD) | Thermal Resistance (RJA) | Junction and Storage Temperature (TJ,Tstg) | Maximum Lead Temperature (TL) |
|---|---|---|---|---|---|---|---|---|---|---|
| LBSS84ELT1G | LBSS84ELT1G | Power MOSFET, 60V, P-Channel | -60 V | 20 V | -130 mA | -1.0 A | 225 mW | 556 C/W | -55 ~ +150 C | 260 C (10 seconds) |
| S-LBSS84ELT1G | S-LBSS84ELT1G | Power MOSFET, 60V, P-Channel (AEC-Q101 Qualified) | -60 V | 20 V | -130 mA | -1.0 A | 225 mW | 556 C/W | -55 ~ +150 C | 260 C (10 seconds) |
| Characteristic | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VBRDSS | -60 | - | - | V | VGS = 0, ID = -250A |
| Zero Gate Voltage Drain Current | IDSS | - | - | -0.1 | A | VGS = 0, VDS = -60 V |
| GateBody Leakage Current, Forward | IGSSF | - | - | 10 | A | VGS = 20 V |
| GateBody Leakage Current, Reverse | IGSSR | - | - | -10 | A | VGS = -20 V |
| Gate Threshold Voltage | VGS(th) | -0.9 | - | -2.0 | V | VDS = VGS, ID = -250A |
| Static DrainSource OnState Resistance | RDS(on) | - | 2 | 6 | VGS = -5.0 V, ID = -100 mA | |
| Transfer Admittance | |yfs| | 50 | - | - | mS | VDS = -25 V, ID = -100 mA, f = 1.0 kHz |
| Input Capacitance | Ciss | - | 45 | - | pF | VDS = -25 V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | - | 4 | - | pF | VDS = -25 V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | - | 1.5 | - | pF | VDS = -25 V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | - | 4.8 | - | ns | VDS = 25 V, VGEN =-10V, IDS = 0.1 A, RL =250, RG=6 |
| Rise Time | tr | - | 19 | - | ns | VDS = 25 V, VGEN =-10V, IDS = 0.1 A, RL =250, RG=6 |
| Turn-Off Delay Time | td(off) | - | 52 | - | ns | VDS = 25 V, VGEN =-10V, IDS = 0.1 A, RL =250, RG=6 |
| Fall Time | tf | - | 32 | - | ns | VDS = 25 V, VGEN =-10V, IDS = 0.1 A, RL =250, RG=6 |
| Continuous Source-Drain Diode Current | IS | - | - | 0.13 | A | (VDS = -25V, VGS = -4.5V, ID = -0.1A) |
| Pulsed Source-Drain Diode Current | ISM | - | - | 0.52 | A | (Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%) |
| Forward Voltage | VSD | - | - | 2.2 | V | IS = -0.13 A |
| Total Gate Charge | Qg | - | 1.8 | - | nC | (VGS = -10 V, ID = -100 mA) |
| Gate-Source Charge | Qgs | - | 0.3 | - | nC | (VDS = -25V, VGS = -4.5V, ID = -0.1A) |
| Gate-Drain Charge | Qgd | - | 0.2 | - | nC | (VDS = -25V, VGS = -4.5V, ID = -0.1A) |
| Dimension | Millimeters (MIN) | Millimeters (NOM) | Millimeters (MAX) | Inches (MIN) | Inches (NOM) | Inches (MAX) |
|---|---|---|---|---|---|---|
| A | 0.89 | 1.0 | 1.11 | 0.035 | 0.04 | 0.044 |
| A1 | 0.01 | 0.06 | 0.1 | 0.001 | 0.002 | 0.004 |
| b | 0.37 | 0.44 | 0.5 | 0.014 | 0.018 | 0.02 |
| c | 0.09 | 0.11 | 0.13 | 0.003 | 0.004 | 0.005 |
| D | 2.80 | 2.9 | 3.04 | 0.11 | 0.114 | 0.12 |
| E | 1.3 | 1.4 | 1.5 | 0.051 | 0.055 | 0.059 |
| e | - | 0.65 | - | - | 0.0256 | - |
| HE | 1.78 | 1.9 | 2.04 | 0.070 | 0.075 | 0.081 |
| L | 0.35 | 0.54 | 0.69 | 0.014 | 0.021 | 0.029 |
| L1 | - | 0.10 | - | - | 0.004 | - |
| 0 | - | 10 | 0 | - | 10 |
2410010131_LRC-LBSS84ELT1G_C417310.pdf
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