low RDSON MOSFET LRC LN2302ALT1G designed for highdensity cell applications and portable electronics
Key Attributes
Model Number:
LN2302ALT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
RDS(on):
130mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26.3pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
311pF@10V
Gate Charge(Qg):
3.1nC@4.5V
Mfr. Part #:
LN2302ALT1G
Package:
SOT-23
Product Description
Product Overview
The LN2302ALT1G and S-LN2302ALT1G are 20V N-Channel Enhancement-Mode MOSFETs designed for high-density cell applications, offering extremely low RDS(ON) and exceptional on-resistance with high DC current capability. These devices comply with RoHS requirements and are Halogen Free. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. Key applications include power management in notebooks, portable equipment, load switches, and DSCs.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Compliance: RoHS, Halogen Free
- Qualification (S-prefix): AEC-Q101 qualified, PPAP capable
- Package Type: SOT23 (TO-236)
- Material: RoHS compliant, Halogen Free
Technical Specifications
| Parameter | Symbol | Model: LN2302ALT1G / S-LN2302ALT1G | Unit |
|---|---|---|---|
| General Characteristics | |||
| DrainSource Voltage | VDSS | 20 | V |
| GatetoSource Voltage Continuous | VGS | 8 | V |
| Drain Current ID Continuous (TA = 25C) | ID | 2.8 | A |
| Drain Current ID Continuous (TA = 70C) | ID | 2.2 | A |
| Maximum Body-Diode Continuous Current | IS | 1.6 | A |
| Pulsed Drain Current | IDM | 10 | A |
| Maximum Power Dissipation (TA = 25) | PD | 1.25 | W |
| Maximum Power Dissipation (TA = 70) | PD | W | |
| Electrical Characteristics (Ta= 25C) | |||
| DrainSource Breakdown Voltage (VGS = 0, ID = 250A) | V(BR)DSS | 20 | V |
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 0.6 - 1.2 | V |
| Zero Gate Voltage Drain Current (VDS=20V, VGS=0V) | IDSS | - 1 | A |
| Zero Gate Voltage Drain Current (VDS=20V, VGS=0V, TJ =55) | IDSS | - 10 | A |
| GateBody Leakage Current (VDS = 0 V, VGS = 8 V) | IGSS | 100 | nA |
| Static DrainSource OnState Resistance (VGS =4.5V, ID = 2.8A) | RDS(on) | 0.03 | |
| Static DrainSource OnState Resistance (VGS =2.5V, ID = 2.5A) | RDS(on) | 0.04 | |
| Static DrainSource OnState Resistance (VGS =1.8V, ID = 2.2A) | RDS(on) | 0.05 | |
| Forward Voltage (IS =1A, VGS =0V) | VSD | 0.75 - 1.2 | V |
| Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 10 V) | Ciss | 311 | pF |
| Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 10 V) | Coss | 33 | pF |
| Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 10 V) | Crss | 26.3 | pF |
| Total Gate Charge | Qg | 3.1 | nC |
| Gate-Source Charge | Qgs | 0.5 | nC |
| Gate-Drain Charge | Qgd | 0.7 | nC |
| Turn-On Delay Time | td(on) | 3.4 | ns |
| Rise Time | tr | 2.1 | ns |
| Turn-Off Delay Time | td(off) | 12.5 | ns |
| Fall Time | tf | 2.3 | ns |
| Thermal Characteristics | |||
| Thermal Resistance, JunctiontoAmbient (1in FR4 board, 2 oz copper) | RJA | 77 | C/W |
| Thermal Resistance, JunctiontoCase | RJC | 70 | C/W |
| Junction and Storage temperature | TJ, Tstg | 55+150 | C |
| Device Marking and Ordering Information | |||
| Device Marking | 02A | ||
| Ordering Information (LN2302ALT1G) | 3000/Tape&Reel | ||
| Ordering Information (LN2302ALT3G) | 10000/Tape&Reel | ||
| Outline and Dimensions | |||
| Dimension A | 0.89 - 1.11 | mm | |
| Dimension A1 | 0.01 - 0.1 | mm | |
| Dimension b | 0.37 - 0.5 | mm | |
| Dimension c | 0.09 - 0.18 | mm | |
| Dimension D | 2.80 - 3.04 | mm | |
| Dimension E | 1.20 - 1.4 | mm | |
| Dimension e | 1.78 - 2.04 | mm | |
| Dimension L | 0.10 - 0.3 | mm | |
| Dimension L1 | 0.35 - 0.69 | mm | |
| Dimension HE | 2.10 - 2.64 | mm | |
2410010130_LRC-LN2302ALT1G_C383242.pdf
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