NPN Silicon Transistor LRC LBC848BWT1G Offering 150 Degree Celsius Maximum Junction Temperature and RoHS Compliance
Key Attributes
Model Number:
LBC848BWT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC848BWT1G
Package:
SC-70
Product Description
Product Overview
The LBC848BWT1G and S-LBC848BWT1G are NPN Silicon General Purpose Transistors designed for various applications. The 'S-' prefix denotes suitability for automotive and other applications with unique site and control change requirements, offering AEC-Q101 qualification and PPAP capability. These transistors are compliant with RoHS requirements and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S- prefix only), PPAP capable (S- prefix only)
Technical Specifications
| Part Number | Device Marking | Shipping | CollectorEmitter Voltage (VCEO) | Collector Current(Continuous) (IC) | CollectorBase Voltage (VCBO) | EmitterBase Voltage (VEBO) | Total Device Dissipation (PD) | Storage Temperature (Tstg) | Junction Temperature (TJ) | Thermal Resistance, Junction to Ambient (RJA) |
| LBC848BWT1G | LBC848BWT1G | 1K / 3000/Tape&Reel | 30 Vdc | 100 mAdc | 30 Vdc | 5 Vdc | 833 mW | -55~+150 C | 150 C | 150 C/W |
| S-LBC848BWT1G | S-LBC848BWT1G | 1K / 3000/Tape&Reel | 30 Vdc | 100 mAdc | 30 Vdc | 5 Vdc | 833 mW | -55~+150 C | 150 C | 150 C/W |
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | |||||
| Collector Cutoff Current | ICBO | - | - | 0.7 | nA |
| Collector Cutoff Current (TA = 150C) | ICBO | - | - | 30 | A |
| ON CHARACTERISTICS | |||||
| DC Current Gain | hFE | 200 | - | 450 | - |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | 0.25 | - | V |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | 0.9 | - | V |
| BaseEmitter Saturation Voltage | VBE(sat) | - | 0.66 | - | V |
| BaseEmitter Saturation Voltage | VBE(sat) | - | 0.95 | - | V |
| BaseEmitter Voltage | VBE(on) | - | 0.7 | - | V |
| BaseEmitter Voltage | VBE(on) | - | 0.8 | - | V |
| SMALLSIGNAL CHARACTERISTICS | |||||
| CurrentGain Bandwidth Product | fT | - | 100 | - | MHz |
| Output Capacitance | Cobo | - | 4.5 | - | pF |
| Noise Figure | NF | - | - | 10 | dB |
| Characteristic | Symbol | Limits | Unit |
| CollectorEmitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | 30 | V |
| CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0) | V(BR)CES | 30 | V |
| CollectorBase Breakdown Voltage (IC = 10 A) | V(BR)CBO | 5 | V |
| EmitterBase Breakdown Voltage (IE = 1.0 A) | V(BR)EBO | 5 | V |
2410010232_LRC-LBC848BWT1G_C976199.pdf
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