Phase control SCR Littelfuse SJ6012DRP ideal for heating applications and power tool control circuits
Key Attributes
Model Number:
SJ6012DRP
Product Custom Attributes
Holding Current (Ih):
40mA
Current - Gate Trigger(Igt):
20mA
Voltage - On State(Vtm):
1.6V
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
600V
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
1.5V
Operating Temperature:
-40℃~+150℃@(Tj)
Mfr. Part #:
SJ6012DRP
Package:
TO-252-3
Product Description
Product Description
The SJxx12xx series high junction temperature SCRs are designed for uni-directional switch applications. They are ideal for phase control in heating, motor speed controls, converters/rectifiers, inrush current control, and capacitive discharge ignitions. These SCRs feature a low gate current trigger level of 6mA, 10mA, or 20mA maximum at approximately 1.5V. They offer a high maximum junction temperature of 150C and surge capability up to 120A at 60 Hz half cycle. Applications include AC generator rectifiers, battery voltage regulators, generic converters, inrush current controllers, and controls for power tools, home appliances, and white goods. Isolated packages are available for ease of heat sinking.
Product Attributes
- Brand: Littelfuse, Inc
- Certifications: Halogen free, RoHS compliant, E71639 (Agency File Number)
- Material: UL recognized compound meeting flammability rating V-0. Lead Material: Copper Alloy. Terminal Finish: 100% Matte Tin-plated.
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Test Conditions | SJxx12x | SJxx12x1 | SJxx12x2 | Unit | Parameter |
|---|---|---|---|---|---|---|
| IT(RMS) | 12 | A | RMS on-state current | |||
| VDRM/VRRM | 400 or 600 | V | Peak repetitive off-state voltage | |||
| IGT | VD = 12V RL = 60 MAX. | 20 | 6 | 10 | mA | Gate Trigger Current |
| VGT | VD = 12V RL = 60 MAX. | 1.5 | 1.5 | 1.5 | V | Gate Trigger Voltage |
| dv/dt | VD = 67% VDRM; gate open; TJ = 125C MIN. | 800 | 70 | 500 | V/s | Critical Rate of Rise of Off-State Voltage |
| VGD | VD = VDRM RL = 3.3 k TJ = 125C MIN. | 0.2 | 0.2 | 0.2 | V | Gate-Controlled Turn-on Voltage |
| IH | IT = 200mA (initial) MAX. | 60 | 15 | 35 | mA | Holding Current |
| tq | IT = 2A; tp = 50s; dv/dt = 5V/s; di/dt = 30A/s MAX. | 40 | 40 | 40 | s | Turn-off Time |
| tgt | IG = 2 x IGT PW = 15s IT = 24A TYP. | 2 | 2 | 2 | s | Gate Trigger Turn-on Time |
| VDSM/VRSM | Pw=100 s VDRM/VRRM+100 | V | Peak non-repetitive blocking voltage | |||
| IT(RMS) | SJxx12Lx TC = 110C | 12 | A | RMS on-state current | ||
| IT(AV) | SJxx12Lx TC = 110C | 7.6 | A | Average on-state current | ||
| ITSM | (single half cycle, TJ (initial) = 25C) f = 60Hz | 120 | A | Peak non-repetitive surge current | ||
| I2t | tp = 8.3 ms | 60 | As | I2t Value for fusing | ||
| di/dt | f = 60Hz; TJ = 150C | 100 | A/s | Critical rate of rise of on-state current | ||
| IGM | TJ = 150C | 2 | A | Peak gate current | ||
| PG(AV) | TJ = 150C | 0.5 | W | Average gate power dissipation | ||
| Tstg | -40 to 150 | C | Storage temperature range | |||
| TJ | -40 to 150 | C | Operating junction temperature range | |||
| R(JC) | 2.4 (SJxx12Lx) / 1.1 (SJxx12Rx) / 1.4 (SJxx12Dx) | C/W | Junction to case thermal resistance | |||
| VTM | IT = 24A; tp = 380 s MAX. | 1.6 | V | On-state Voltage | ||
| IDRM / IRRM | VDRM = VRRM TJ = 25C MAX. | 10 | A | Peak on-state leakage current | ||
| IGT | VD = 12V RL = 60 MAX. (TO-251, TO-252) | 20 | 6 | mA | Gate Trigger Current | |
| VGT | VD = 12V RL = 60 MAX. (TO-251, TO-252) | 1.5 | 1.5 | V | Gate Trigger Voltage | |
| dv/dt | VD = VDRM; gate open; TJ = 125C 400V MIN. (TO-251, TO-252) | 100 | 250 | V/s | Critical Rate of Rise of Off-State Voltage | |
| VGD | VD = VDRM RL = 3.3 k TJ = 125C MIN. (TO-251, TO-252) | 0.2 | 0.2 | V | Gate-Controlled Turn-on Voltage | |
| IH | IT = 200mA (initial) MAX. (TO-251, TO-252) | 20 | 40 | mA | Holding Current | |
| tq | IT = 2A; tp = 50s; dv/dt = 5V/s; di/dt = 30A/s MAX. (TO-251, TO-252) | 35 | 35 | s | Turn-off Time | |
| tgt | IG = 2 x IGT PW = 15s IT = 12A TYP. (TO-251, TO-252) | 0.5 | 2 | s | Gate Trigger Turn-on Time |
2305291713_Littelfuse-SJ6012DRP_C7370891.pdf
Related Products
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
