Sensitive SCR Littelfuse S8X8TSRP with 800 Volt blocking voltage and high dvdt noise immunity rating

Key Attributes
Model Number: S8X8TSRP
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.7V
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
800V
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
S8X8TSRP
Package:
SOT-223
Product Description

Product Overview

The Littelfuse EV Series Sensitive SCRs are 0.8 Amp devices featuring a small die planar construction for high static dv/dt and lower turn-off time (tq). They are specifically designed for GFCI (Ground Fault Circuit Interrupter) and Gas Ignition applications, offering glass-passivated junctions for long-term reliability and parametric stability. Key advantages include surge current capability, blocking voltage up to 800V, high dv/dt noise immunity, and sensitive gate for direct microprocessor interface.

Product Attributes

  • Brand: Littelfuse
  • Series: EV Series
  • Certifications: RoHS compliant, Halogen-Free
  • Material: UL recognized epoxy meeting flammability rating 94V-0
  • Terminal Finish: 100% Matte Tin-plated
  • Lead Material: Copper Alloy

Technical Specifications

ParameterTO-92 (TC=55C)SOT-89 (TC=60C)SOT-223 (TL=60C)Unit
RMS on-state current (IT(RMS))0.80.80.8A
Average on-state current (IT(AV))0.510.510.51A
Non repetitive surge peak on-state current (ITSM) (F=50Hz)888A
Non repetitive surge peak on-state current (ITSM) (F=60Hz)101010A
I2t Value for fusing (tp = 10 ms, F = 50 Hz)0.320.320.32As
I2t Value for fusing (tp = 8.3 ms, F = 60 Hz)0.410.410.41As
Critical rate of rise of on-state current (di/dt) (IG = 10mA, TJ = 125C)505050A/s
Peak Gate Current (IGM) (tp = 10 s, TJ = 125C)1.01.01.0A
Average gate power dissipation (PG(AV)) (TJ = 125C)0.10.10.1W
Storage junction temperature range (Tstg) -40 to 150C
Operating junction temperature range (TJ) -40 to 125C
Blocking voltage (VDRM/VRRM)400 to 800V
Sensitive gate trigger current (IGT)5 to 200A
Turn-Off Time (tq) (TJ = 25C @ 600 V, RGK =1 k)25s
SymbolDescriptionTest ConditionsSxX8yS1 Limit ValueSxX8yS2 Limit ValueSxX8yS Limit ValueUnit
IGTDC Gate Trigger CurrentVD = 6V, RL = 100 MIN. 0.5, MAX. 5MIN. 1, MAX. 50MIN. 15, MAX. 200A
VGTDC Gate Trigger VoltageVD = 6V, RL = 100 MAX. 0.8V
VGRMPeak Reverse Gate VoltageIRG = 10AMIN. 5V
IHHolding CurrentRGK = 1 K, Initial Current = 20mAMAX. 5mA
(dv/dt)sCritical Rate-of-Rise of Off-State VoltageTJ = 125C, VD = VDRM/VRRM, Exp. Waveform, RGK =1 kMIN. 75V/s
VGDGate Non-Trigger VoltageVD = VDRM, RGK =1 k, TJ = 25CMIN. 0.2V
tqTurn-Off TimeTJ = 25C @ 600 V, RGK =1 kMAX. 30MAX. 25MAX. 25s
tgtTurn-On TimeIG=10mA, PW = 15sec, IT = 1.6A(pk)TYP. 2.0s
SymbolDescriptionTest ConditionsLimit ValueUnit
VTMPeak On-State VoltageITM = 1.6A (pk)MAX. 1.70V
IDRMOff-State Current, Peak RepetitiveTJ = 25C @ VD = VDRM, RGK =1 kMAX. 3A
IDRMOff-State Current, Peak RepetitiveTJ = 125C @ VD = VDRM, RGK =1 kMAX. 500A
Rth(j-c)Junction to case (AC)IT = 0.8A (RMS), 60Hz AC resistive load condition, 100% conduction.TO-92: 75 C/W; SOT-223: 30 C/W; SOT-89: 50 C/WC/W
Rth(j-a)Junction to ambientIT = 0.8A (RMS)TO-92: 150 C/W; SOT-223: 60 C/W; SOT-89: 90 C/WC/W

2411272231_Littelfuse-S8X8TSRP_C315976.pdf

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