High Speed Switching N Channel MOSFET LRC LSI1012BN3T5G featuring 1.8 Volt Gate Source Voltage rating
Key Attributes
Model Number:
LSI1012BN3T5G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
600mA
RDS(on):
250mΩ@4.5V,0.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
530mV
Reverse Transfer Capacitance (Crss@Vds):
7pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
83pF@10V
Pd - Power Dissipation:
360mW
Gate Charge(Qg):
680pC@4.5V
Mfr. Part #:
LSI1012BN3T5G
Package:
SOT-883
Product Description
Product Overview
The LSI1012BN3T5G and S-LSI1012BN3T5G are N-Channel 1.8-V (G-S) MOSFETs designed for high-side switching applications. They offer a low on-resistance of 0.7 and a low threshold voltage of 0.8V (typ), enabling ease in driving switches and low-voltage operation. With a fast switching speed of 10 ns, these MOSFETs are suitable for high-speed circuits and battery-operated systems. They are RoHS compliant and Halogen Free. The S- prefix variant is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Compliance: RoHS, Halogen Free
- Qualification (S- prefix): AEC-Q101, PPAP capable
- Channel Type: N-Channel
- Gate-Source Voltage Rating: 1.8 V
- Package Type: SOT883B
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 20 | V | |
| Gate-Source Voltage | VGS | - | - | 8 | V | |
| Operating Junction and Storage Temperature Range | TJ , Tstg | -55 | - | 150 | ||
| Continuous Drain Current (TJ = 150) | ID | - | - | 360 | mA | Note 2 |
| Pulsed Drain Current | IDM | - | - | 1000 | mA | Note 1 |
| Continuous Source Current (diode conduction) | IS | - | - | 680 | mA | Note 2 |
| Maximum Power Dissipation | PD | - | - | 500 | mW | Note 2 |
| Thermal Resistance, Junction to Ambient | RJA | - | - | - | /W | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1.0 | V | (VDS = VGS , ID = 250A) |
| Gate-Body Leakage | IGSS | - | - | 5 | A | (VDS = 0 V, VGS = 8 V) |
| Zero Gate Voltage Drain Current | IDSS | - | - | 0.25 | A | (VDS = 16 V, VGS = 0 V) |
| Zero Gate Voltage Drain Current (TJ = 85) | IDSS | - | - | 0.4 | A | (VDS = 16 V, VGS = 0 V, TJ = 85) |
| On-State Drain Current | ID(on) | - | 700 | - | mA | (VDS = 5 V, VGS = 4.5 V) |
| Drain-Source On-State Resistance | RDS(on) | - | 0.7 | - | (VGS = 4.5 V, ID = 0.5 A) | |
| Drain-Source On-State Resistance | RDS(on) | - | 1.3 | - | (VGS = 2.5 V, ID = 0.2 A) | |
| Drain-Source On-State Resistance | RDS(on) | - | 6.5 | - | (VGS = 1.8 V, ID = 0.1 A) | |
| Forward Transconductance | gfs | - | 75 | - | mS | (VDS = 10 V, ID = 400 mA) |
| Diode Forward Voltage | VSD | - | 0.68 | - | V | (IS = 0.5A, VGS = 0 V) |
| Drain-Source Breakdown Voltage | BVDSS | 20 | - | - | V | (VGS = 0 V, IDS = 250 A) |
| Total Gate Charge | Qg | - | 225 | - | pC | (ID=500mA) |
| Total Gate Charge | Qg | - | 750 | - | pC | (ID=250mA) |
| Gate-Source Charge | Qgs | - | - | - | pC | |
| Gate-Drain Charge | Qgd | - | - | - | pC | |
| Turn-On Delay Time | td(on) | - | - | - | ns | (VDD = 10 V, RL = 47,ID=200 mA, VGEN = 4.5 V, RG = 10) |
| Rise Time | tr | - | - | - | ns | (VDD = 10 V, RL = 47,ID=200 mA, VGEN = 4.5 V, RG = 10) |
| Turn-Off Delay Time | td(off) | - | - | - | ns | (VDD = 10 V, RL = 47,ID=200 mA, VGEN = 4.5 V, RG = 10) |
| Fall Time | tf | - | - | - | ns | (VDD = 10 V, RL = 47,ID=200 mA, VGEN = 4.5 V, RG = 10) |
| Input Capacitance | Ciss | - | 83 | - | pF | (VDS = 10 V, VGS = 4.5 V, ID = 250 mA), f = 1MHz |
| Output Capacitance | Coss | - | 15 | - | pF | (VDS = 10 V, VGS = 4.5 V, ID = 250 mA), f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 7 | - | pF | (VDS = 10 V, VGS = 4.5 V, ID = 250 mA), f = 1MHz |
Applications
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching in Cell Phones, Pagers
Device Marking and Ordering Information
Models: LSI1012BN3T5G, S-LSI1012BN3T5G
Marking: A2
Ordering: 10000/Tape&Reel
2212131830_LRC-LSI1012BN3T5G_C5273375.pdf
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