Silicon NPN Transistor LRC LBC848CLT1G Featuring Automotive Grade Certification and Robust Performance
Key Attributes
Model Number:
LBC848CLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC848CLT1G
Package:
SOT-23
Product Description
LESHAN RADIO COMPANY, LTD. General Purpose Transistors - LBC846ALT1G Series
The LBC846ALT1G Series NPN Silicon transistors are designed for general-purpose applications. They offer robust performance with high ESD ratings and compliance with RoHS requirements. The S- prefix denotes automotive-grade devices qualified to AEC-Q101 and PPAP capable.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: RoHS compliant, AEC-Q101 (S- prefix)
- Moisture Sensitivity Level: 1
- ESD Rating (Human Body Model): >4000 V
- ESD Rating (Machine Model): >400 V
Technical Specifications
| Device Marking | Package | Shipping | VCEO (Vdc) | VCBO (Vdc) | VEBO (Vdc) | IC (mAdc) | PD (mW) [FR-5] | RJA (C/W) [FR-5] | PD (mW) [Alumina] | RJA (C/W) [Alumina] | TJ, Tstg (C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| LBC846ALT1G | SOT-23 | 3000/Tape&Reel | 65 | 80 | 6.0 | 100 | 225 | 556 | 300 | 417 | -55 to +150 |
| LBC847ALT1G | SOT-23 | 3000/Tape&Reel | 45 | 50 | 6.0 | 100 | 225 | 556 | 300 | 417 | -55 to +150 |
| LBC848ALT1G | SOT-23 | 3000/Tape&Reel | 30 | 30 | 5.0 | 100 | 225 | 556 | 300 | 417 | -55 to +150 |
| LBC849BLT1G | SOT-23 | 3000/Tape&Reel | 30 | 30 | 5.0 | 100 | 225 | 556 | 300 | 417 | -55 to +150 |
| LBC850BLT1G | SOT-23 | 3000/Tape&Reel | 45 | 50 | 6.0 | 100 | 225 | 556 | 300 | 417 | -55 to +150 |
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 65 | Vdc | LBC846A,B (IC = 10 mA) | ||
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 45 | Vdc | LBC847A,B,C, LBC850B,C (IC = 10 mA) | ||
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 30 | Vdc | LBC848A,B,C, LBC849B,C (IC = 10 mA) | ||
| Collector Cutoff Current | ICBO | 15 | nA | VCB = 30 V | ||
| Collector Cutoff Current | ICBO | 5.0 | A | VCB = 30 V, TA = 150C | ||
| DC Current Gain | hFE | 110 | 800 | IC = 2.0 mA, VCE = 5.0 V | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.6 | V | IC = 100 mA, IB = 5.0 mA | ||
| BaseEmitter Saturation Voltage | VBE(sat) | 0.9 | V | IC = 100 mA, IB = 5.0 mA | ||
| BaseEmitter Voltage | VBE(on) | 580 | 770 | mV | IC = 2.0 mA to 10 mA, VCE = 5.0 V | |
| CurrentGain Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | ||
| Noise Figure | NF | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz |
1810010513_LRC-LBC848CLT1G_C94562.pdf
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