Automotive MOSFET LRC L2N7002KX4T5G featuring switching amplification RoHS compliance and Halogen Free materials
Key Attributes
Model Number:
L2N7002KX4T5G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
410mA
RDS(on):
2.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Number:
1 N-channel
Input Capacitance(Ciss):
34pF
Output Capacitance(Coss):
3pF
Gate Charge(Qg):
360pC@4.5V
Mfr. Part #:
L2N7002KX4T5G
Package:
DFN-4A-EP(1x1)
Product Description
Product Overview
The L2N7002KX4T5G and S-L2N7002KX4T5G are small signal MOSFETs designed for automotive and general applications. The S-prefix variant is specifically qualified for automotive use with unique site and control change requirements, meeting AEC-Q101 standards and PPAP capabilities. These devices feature RoHS compliance and Halogen-Free materials, along with Gate-Source ESD protection. They are suitable for various electronic circuits requiring reliable switching and amplification.
Product Attributes
- Brand: Leshan Radio Company, LTD. (LRC)
- Certifications: RoHS compliant, Halogen Free, AEC-Q101 qualified (S-prefix)
- Material Compliance: RoHS requirements and Halogen Free
- Packaging: DFN1010-4A
- Revision: Rev.B
- Date: Nov. 2019
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
|---|---|---|---|---|
| DrainSource Voltage | VDSS | 60 | V | |
| GateSource Voltage | VGS | 20 | V | |
| Pulsed Drain Current (tp=10s) | IDM | 1.5 | A | |
| Source Current (Body Diode) | IS | 410 | mA | |
| Junction and Storage temperature | TJ,Tstg | -55+150 | C | |
| DrainSource Breakdown Voltage (VGS = 0, ID = 250A) | VBRDSS | 60 | V | Min. |
| Zero Gate Voltage Drain Current TJ = 25C (VGS = 0, VDS = 60 V) | IDSS | 1.0 | A | Max. |
| Zero Gate Voltage Drain Current TJ = 125C (VGS = 0, VDS = 50 V) | IDSS | 500 | A | Max. |
| GateBody Leakage Current, Forward (VGS = 20 V) | IGSSF | 10 | A | Max. |
| GateBody Leakage Current, Reverse (VGS = - 20 V) | IGSSR | -10 | A | Max. |
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 1.0 | V | Typ. |
| Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) | RDS(on) | 2.2 | Ohm | Max. |
| Static DrainSource OnState Resistance (VGS = 5.0 V, ID = 50 mA) | RDS(on) | 3.8 | Ohm | Max. |
| Forward Transconductance (VDS = 5.0 V, ID = 200 mA) | gfs | 80 | mS | Typ. |
| Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) | Ciss | 34 | pF | Typ. |
| Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) | Coss | 3.0 | pF | Typ. |
| Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) | Crss | 3.0 | pF | Typ. |
| Turn-On Delay Time | td(on) | 2.3 | ns | Typ. (Note 1) |
| Rise Time | tr | 2.5 | ns | Typ. (Note 1) |
| Turn-Off Delay Time | td(off) | 12 | ns | Typ. (Note 1) |
| Fall Time | tf | 19 | ns | Typ. (Note 1) |
| Diode Forward OnVoltage TJ = 25C (IS = 115 mA, VGS = 0 V) | VSD | 0.7 | V | Typ. |
| Device Marking | L2N7002KX4T5G | |||
| Device Marking (S-prefix) | S-L2N7002KX4T5G | |||
| Shipping (Tape&Reel) | 10000/Tape&Reel | |||
| Package Type | DFN1010-4A | |||
| Package Dimensions (L) | 0.20 - 0.30 | mm | MIN NOR MAX | |
| Package Dimensions (D) | 0.95 - 1.05 | mm | MIN NOR MAX | |
| Package Dimensions (E) | 0.95 - 1.05 | mm | MIN NOR MAX | |
| Package Dimensions (b) | 0.17 - 0.25 | mm | MIN NOR MAX |
Note 1: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2504101957_LRC-L2N7002KX4T5G_C2912012.pdf
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