Silicon transistor dual npn pnp LRC LMBT3946DW1T1G with low VCE sat and compact SC88 SOT 363 package
Key Attributes
Model Number:
LMBT3946DW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN+PNP
Number:
2 NPN + 2 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT3946DW1T1G
Package:
SC-88
Product Description
Product Overview
The LMBT3946DW1T1G and S-LMBT3946DW1T1G are dual general-purpose silicon transistors, available in both NPN and PNP configurations. The 'S-' prefix denotes suitability for automotive and other applications with stringent site and control change requirements, offering AEC-Q101 qualification and PPAP capability. These transistors are designed to simplify circuit design, reduce board space, and decrease component count with their low VCE(sat) of 0.4 V.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Origin: China (implied by manufacturer name and location)
- Material: Silicon
- Certifications: RoHS compliant, Halogen Free, AEC-Q101 qualified (for S- prefix)
- Package: SC88 (SOT-363)
Technical Specifications
| Parameter | Symbol | LMBT3946DW1T1G (NPN) | S-LMBT3946DW1T1G (NPN) | LMBT3946DW1T1G (PNP) | Unit | |
| Maximum Ratings | ||||||
| Collector Current Continuous | IC | 200 mAdc | 200 mAdc | -200 mAdc | mAdc | |
| CollectorEmitter Voltage | VCEO | 40 Vdc | 40 Vdc | -40 Vdc | Vdc | |
| CollectorBase Voltage | VCBO | 60 Vdc | 60 Vdc | -40 Vdc | Vdc | |
| EmitterBase Voltage | VEBO | 6 Vdc | 6 Vdc | -5 Vdc | Vdc | |
| Total Device Dissipation | PD | 1.2 W | 1.2 W | 1.2 W | W | |
| Thermal Resistance, JunctiontoAmbient | RJA | 833 C/W | 833 C/W | 833 C/W | C/W | |
| Junction and Storage Temperature | TJ,Tstg | -55+150 C | -55+150 C | -55+150 C | C | |
| Electrical Characteristics (Ta = 25C) | ||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 40 V | 40 V | -40 V | V | |
| CollectorBase Breakdown Voltage | VBR(CBO) | 60 V | 60 V | -40 V | V | |
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 V | 6 V | -5 V | V | |
| Collector Cutoff Current | ICEX | 50 nA | 50 nA | -50 nA | nA | |
| Base Cutoff Current | IBL | 50 nA | 50 nA | -50 nA | nA | |
| DC Current Gain | HFE | 40-300 (IC=1mA,VCE=1V) | 40-300 (IC=1mA,VCE=1V) | 100-300 (IC=-0.1mA,VCE=-1V) | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.2-0.3 V (IC=10mA,IB=1mA) | 0.2-0.3 V (IC=10mA,IB=1mA) | -0.4-0.65 V (IC=-10mA,IB=-1mA) | V | |
| BaseEmitter Saturation Voltage | VBE(sat) | 0.85-0.95 V (IC=10mA,IB=1mA) | 0.85-0.95 V (IC=10mA,IB=1mA) | -0.85-0.95 V (IC=-10mA,IB=-1mA) | V | |
| CurrentGain Bandwidth Product | fT | 300 MHz (IC=10mA,VCE=2V) | 300 MHz (IC=10mA,VCE=2V) | 250 MHz (IC=-10mA,VCE=-20V) | MHz | |
| Output Capacitance | Cobo | 4 pF (VCB=5V,IE=0,f=1MHz) | 4 pF (VCB=5V,IE=0,f=1MHz) | 4.5 pF (VCB=-5V,IE=0,f=1MHz) | pF | |
| Input Capacitance | Cibo | 8 pF (VEB=0.5V,IC=0,f=1MHz) | 8 pF (VEB=0.5V,IC=0,f=1MHz) | 10 pF (VEB=-0.5V,IC=0,f=1MHz) | pF | |
| Switching Characteristics | ||||||
| Delay Time | td | 35 ns | 35 ns | 35 ns | ns | |
| Rise Time | tr | 35 ns | 35 ns | 35 ns | ns | |
| Storage Time | ts | 200 ns | 200 ns | 225 ns | ns | |
| Fall Time | tf | 50 ns | 50 ns | 75 ns | ns | |
| Device Marking and Ordering Information | ||||||
| Device Marking | LMBT3946DW1T1G | S-LMBT3946DW1T1G | LMBT3946DW1T1G | |||
| Shipping | 3000/Tape&Reel | 10000/Tape&Reel | 3000/Tape&Reel | |||
1809192137_LRC-LMBT3946DW1T1G_C136169.pdf
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