AECQ101 Qualified NPN Silicon Transistor LRC S-LMBT4401WT1G PPAP Capable Halogen Free RoHS Compliant
Key Attributes
Model Number:
S-LMBT4401WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBT4401WT1G
Package:
SOT-323
Product Description
Product Overview
The LMBT4401WT1G and S-LMBT4401WT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable. These transistors are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (for S- prefix models)
- Package: SC70 (SOT-323)
Technical Specifications
| Parameter | Symbol | LMBT4401WT1G | S-LMBT4401WT1G | Min. | Max. | Unit |
| MAXIMUM RATINGS (Ta = 25C) | ||||||
| CollectorEmitter Voltage | VCEO | 40 | V | |||
| CollectorBase Voltage | VCBO | 60 | V | |||
| EmitterBase Voltage | VEBO | 6 | V | |||
| Collector Current Continuous | IC | 600 | mA | |||
| Total Device Dissipation, FR5 Board (Note 1) @ TA = 25C | PD | 833 | mW | |||
| Thermal Resistance, JunctiontoAmbient (Note 1) | RJA | 150 | C/W | |||
| Junction and Storage temperature | TJ,Tstg | -55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||||
| OFF CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage (IC = 1.0 mA, IB = 0) | VBR(CEO) | 40 | V | |||
| CollectorBase Breakdown Voltage (IC = 0.1 mA, IE = 0) | VBR(CBO) | 60 | V | |||
| EmitterBase Breakdown Voltage (IE = 0.1 mA, IC = 0) | VBR(EBO) | 6 | V | |||
| Collector Cutoff Current (VCE = 35 V, VEB = 0.4V) | ICEX | 0.1 | A | |||
| Base Cutoff Current (VCE = 35 V, VEB = 0.4V) | IBEV | 0.1 | A | |||
| ON CHARACTERISTICS (Note 2.) | ||||||
| DC Current Gain (IC = 0.1 mA, VCE = 1.0 V) | HFE | 20 | ||||
| DC Current Gain (IC = 1.0 mA, VCE = 1.0 V) | HFE | 40 | ||||
| DC Current Gain (IC = 10 mA, VCE = 1.0 V) | HFE | 80 | ||||
| DC Current Gain (IC = 150 mA, VCE = 1.0 V) | HFE | 100 | ||||
| DC Current Gain (IC = 500 mA, VCE = 2.0 V) | HFE | 250 | ||||
| CollectorEmitter Saturation Voltage (IC = 150 mA, IB = 15 mA) | VCE(sat) | 0.4 | V | |||
| CollectorEmitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | 0.75 | V | |||
| BaseEmitter Saturation Voltage (IC = 150 mA, IB = 15 mA) | VBE(sat) | 0.95 | V | |||
| BaseEmitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VBE(sat) | 1.2 | V | |||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product (IC = 20mA, VCE= 10V, f = 100MHz) | fT | 300 | MHz | |||
| CollectorBase Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) | Ccb | 6.5 | pF | |||
| EmitterBase Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) | Ceb | 30 | pF | |||
| Input Impedance (VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz) | hie | 1 | 15 | K | ||
| Voltage Feedback Ratio (VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz) | hre | 0.1 | ||||
| SmallSignal Current Gain (VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz) | hfe | 40 | ||||
| Output Admittance (VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz) | hoe | 1 X 10-3 | mhos | |||
| SWITCHING CHARACTERISTICS (2.Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%) | ||||||
| Delay Time | td | 2.0 | ns | |||
| Rise Time | tr | 20 | ns | |||
| Storage Time | ts | 30 | ns | |||
| Fall Time | tf | 30 | ns | |||
| DEVICE MARKING AND ORDERING INFORMATION | ||||||
| Device Marking | LMBT4401WT1G | S-LMBT4401WT1G | ||||
| Shipping | 2X 3000/Tape&Reel | 2X 10000/Tape&Reel | ||||
2201121900_LRC-S-LMBT4401WT1G_C2941691.pdf
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