General Purpose NPN Silicon Transistor LRC L2SC2411KRLT1G Suitable for Control Change Applications
Key Attributes
Model Number:
L2SC2411KRLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
32V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L2SC2411KRLT1G
Package:
SOT-23
Product Description
Product Overview
The L2SC2411KRLT1G and S-L2SC2411KRLT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variant is AEC-Q101 qualified and PPAP capable. These transistors are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S- prefix only)
- Packaging: Tape & Reel
Technical Specifications
| Model | Description | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Thermal Resistance (RJA) | DC Current Gain (HFE) | Collector-Emitter Saturation Voltage (VCE(sat)) | Current-Gain Bandwidth Product (fT) | Output Capacitance (Cob) |
| L2SC2411KRLT1G | General Purpose Transistor, NPN Silicon | 32 Vdc | 500 mAdc | 556 C/W | 180 - 390 | ≤ 0.4 V (at 500 mAdc, 50 mAdc) | 250 MHz | ≤ 6 pF |
| S-L2SC2411KRLT1G | General Purpose Transistor, NPN Silicon (AEC-Q101) | 32 Vdc | 500 mAdc | 556 C/W | 180 - 390 | ≤ 0.4 V (at 500 mAdc, 50 mAdc) | 250 MHz | ≤ 6 pF |
1811031709_LRC-L2SC2411KRLT1G_C136168.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
