Low loss fast recovery diode Littelfuse IXYS DSEP12-12A suitable for switch mode power supplies and UPS

Key Attributes
Model Number: DSEP12-12A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
90A
Reverse Leakage Current (Ir):
100uA@1.2kV
Reverse Recovery Time (trr):
40ns
Operating Junction Temperature Range:
-55℃~+175℃@(Tj)
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Pd - Power Dissipation:
95W
Voltage - Forward(Vf@If):
3.19V@30A
Current - Rectified:
12A
Mfr. Part #:
DSEP12-12A
Package:
TO-220AC-2
Product Description

Product Overview

The DSEP12-12A is a high-performance fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery time, and improved thermal behavior. Its very low Irm-values and soft reverse recovery contribute to reduced power dissipation and lower turn-on losses in commutating switches, minimizing EMI/RFI. This diode is avalanche voltage rated for reliable operation and is suitable as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and freewheeling diode, as well as in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: TO-220
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Chip Technology: Planar passivated

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 1200
VRRM max. repetitive reverse blocking voltage TVJ = 150C V 1200
VRRM max. repetitive reverse blocking voltage TVJ = 175C V 1200
IFAVM average forward current TA = 45C A 15
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TA = 45C A 120
VJ virtual junction temperature C 175 -55
Tstg storage temperature C 150 -55
Ptot total power dissipation TA = 25C W 95
VF0 threshold voltage TVJ = 175C V 1.03
rF slope resistance for power loss calculation only TVJ = 175C m 43
thJC thermal resistance junction to case K/W 0.50
thCH thermal resistance case to heatsink K/W 0.50
CJ junction capacitance VJ = 600 V; f = 1 MHz pF 135
IR reverse current, drain current VJ = 1200 V; TVJ = 25C A 150
IR reverse current, drain current VJ = 1200 V; TVJ = 100C A 150
VF forward voltage drop IF = 15 A; TVJ = 100C V 1.03
VF forward voltage drop IF = 30 A; TVJ = 100C V 1.87
trr reverse recovery time IF = 15 A; -diF/dt = 200 A/s; VR = 600 V; TVJ = 100C ns 40
IRM max. reverse recovery current IF = 15 A; -diF/dt = 200 A/s; VR = 600 V; TVJ = 100C A 9 140
Qr reverse recovery charge IF = 15 A; -diF/dt = 200 A/s; VR = 600 V; TVJ = 100C C 140
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 1200
FAV average forward current TA = 100C A 12

Dimensions (TO-220):

Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
P 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125

Product Marking: DSEP12-12A

Date Code: Zyyww

Lot #: abcdef

Assembly Line: 1 3

Backside: cathode


2410121747_Littelfuse-IXYS-DSEP12-12A_C82572.pdf

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