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quality Compact SOT-23 Package NPN Silicon Transistor LRC L8050HQLT1G with 1.5 Amp Collector Current Capacity factory
quality Compact SOT-23 Package NPN Silicon Transistor LRC L8050HQLT1G with 1.5 Amp Collector Current Capacity factory

Compact SOT-23 Package NPN Silicon Transistor LRC L8050HQLT1G with 1.5 Amp Collector Current Capacity

Key Attributes
Model Number: L8050HQLT1G
Product Custom Attributes
Current - Collector Cutoff:
150nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
225mW
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
L8050HQLT1G
Package:
SOT-23
Product Description

Product Overview

The LESHAN RADIO COMPANY, LTD. L8050H series are NPN Silicon General Purpose Transistors designed for high current capacity in a compact SOT-23 package. These epitaxial planar type transistors offer an IC of 1.5 A and have an NPN complement, the L8050H. Pb-Free packages are available. An 'S-' prefix denotes devices qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capability.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Type: NPN Silicon General Purpose Transistor
  • Package: SOT-23
  • Features: High current capacity, compact package, Epitaxial planar type.
  • Availability: Pb-Free Package available.
  • Automotive Qualification: S- prefix for AEC-Q101 Qualified and PPAP Capable devices.

Technical Specifications

Device MarkingCollector-Emitter Voltage (VCEO)Collector Current (IC)Total Device Dissipation (PD) FR-5 BoardThermal Resistance (RJA) FR-5 BoardTotal Device Dissipation (PD) Alumina SubstrateThermal Resistance (RJA) Alumina SubstrateJunction and Storage Temperature (Tj, Tstg)Collector Cutoff Current (ICBO)Emitter Cutoff Current (IEBO)DC Current Gain (hFE)Collector-Emitter Saturation Voltage (VCE(S))
L8050HPLT1G / L8050HPLT3G25 V1500 mAdc225 mW @ TA=25C (Derate 1.8 mW/C)556 C/W300 mW @ TA=25C (Derate 2.4 mW/C)417 C/W-55 to +150 C150 nA @ VCB=35V150 nA @ VEB=4V100 - 600- 0.5 V @ IC=800mA, IB=80mA
L8050HQLT1G / L8050HQLT3G25 V1500 mAdc225 mW @ TA=25C (Derate 1.8 mW/C)556 C/W300 mW @ TA=25C (Derate 2.4 mW/C)417 C/W-55 to +150 C150 nA @ VCB=35V150 nA @ VEB=4V100 - 600- 0.5 V @ IC=800mA, IB=80mA
L8050HRLT1G / L8050HRLT3G25 V1500 mAdc225 mW @ TA=25C (Derate 1.8 mW/C)556 C/W300 mW @ TA=25C (Derate 2.4 mW/C)417 C/W-55 to +150 C150 nA @ VCB=35V150 nA @ VEB=4V100 - 600- 0.5 V @ IC=800mA, IB=80mA
L8050HSLT1G / L8050HSLT3G25 V1500 mAdc225 mW @ TA=25C (Derate 1.8 mW/C)556 C/W300 mW @ TA=25C (Derate 2.4 mW/C)417 C/W-55 to +150 C150 nA @ VCB=35V150 nA @ VEB=4V100 - 600- 0.5 V @ IC=800mA, IB=80mA
S-L8050HPLT1G / S-L8050HPLT3G25 V1500 mAdc225 mW @ TA=25C (Derate 1.8 mW/C)556 C/W300 mW @ TA=25C (Derate 2.4 mW/C)417 C/W-55 to +150 C150 nA @ VCB=35V150 nA @ VEB=4V100 - 600- 0.5 V @ IC=800mA, IB=80mA
S-L8050HQLT1G / S-L8050HQLT3G25 V1500 mAdc225 mW @ TA=25C (Derate 1.8 mW/C)556 C/W300 mW @ TA=25C (Derate 2.4 mW/C)417 C/W-55 to +150 C150 nA @ VCB=35V150 nA @ VEB=4V100 - 600- 0.5 V @ IC=800mA, IB=80mA
S-L8050HRLT1G / S-L8050HRLT3G25 V1500 mAdc225 mW @ TA=25C (Derate 1.8 mW/C)556 C/W300 mW @ TA=25C (Derate 2.4 mW/C)417 C/W-55 to +150 C150 nA @ VCB=35V150 nA @ VEB=4V100 - 600- 0.5 V @ IC=800mA, IB=80mA
S-L8050HSLT1G / S-L8050HSLT3G25 V1500 mAdc225 mW @ TA=25C (Derate 1.8 mW/C)556 C/W300 mW @ TA=25C (Derate 2.4 mW/C)417 C/W-55 to +150 C150 nA @ VCB=35V150 nA @ VEB=4V100 - 600- 0.5 V @ IC=800mA, IB=80mA

1809051140_LRC-L8050HQLT1G_C39280.pdf

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