High Voltage Transistor Automotive Applications LRC LMBT5401LT1G HW RoHS Halogen Free Certified
Key Attributes
Model Number:
LMBT5401LT1G-HW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
150V
Mfr. Part #:
LMBT5401LT1G-HW
Package:
SOT-23
Product Description
Product Overview
High Voltage Transistor designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variants are AEC-Q101 qualified and PPAP capable. These transistors offer RoHS compliance and Halogen Free material.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Certifications: RoHS, Halogen Free, AEC-Q101 Qualified (S- prefix variants), PPAP Capable (S- prefix variants)
Technical Specifications
| Parameter | Symbol | LMBT5401LT1G Limits | S-LMBT5401LT1G Limits | Unit | Notes |
| Collector-Emitter Voltage | VCEO | -150 | - | V | |
| Collector-Base voltage | VCBO | - | -160 | V | |
| Emitter-Base Voltage | VEBO | -500 | - | V | |
| Collector current Continuous | IC | 300 | 10000/Tape&Reel | mA | |
| Total Device Dissipation | PD | 300 | 225 | mW | FR-5 Board @ TA = 25C |
| Derate above 25C | 1.8 | mW/ | |||
| Thermal Resistance, JunctiontoAmbient | RJA | 417 | 556 | /W | FR-5 Board |
| Total Device Dissipation | PD | - | - | mW | Alumina Substrate, (Note 2)@ TA = 25C |
| Derate above 25C | - | - | mW/ | Alumina Substrate | |
| Thermal Resistance, JunctiontoAmbient | RJA | - | - | /W | Alumina Substrate |
| Junction and Storage temperature | TJ,Tstg | 55+150 | 55+150 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -150 | -150 | V | (IC =-1.0mA,IB=0) |
| Collector-Base Breakdown voltage | V(BR)CBO | -160 | -160 | V | (IC = -100A,IE=0) |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | -5 | V | (IE = -10A,IC=0) |
| Collector Cutoff Current | ICBO | -50 | -50 | nA | (VCB = -120 V,IE=0) |
| Collector Cutoff Current | ICBO | - | - | A | (VCB = -120 V,IE=0,TA=100) |
| Collector-Emitter cutoff Current | ICEO | -10 | -10 | A | (VCE-150V, IB=0) |
| DC Current Gain | HFE | 40-240 | 40-200 | (IC = 1.0mA, VCE = 5.0 V) | |
| DC Current Gain | HFE | 50-500 | 50-500 | (IC = 10 mA, VCE = 5.0 V) | |
| DC Current Gain | HFE | - | - | (IC = 50 mA, VCE = 5.0 V) | |
| Collector-Emitter Saturation Voltage | VCE(S) | -0.2 | -0.2 | V | (IC = 10 mA, IB = 1.0 mA) |
| Collector-Emitter Saturation Voltage | VCE(S) | - | - | V | (IC = 50 mA, IB = 5.0 mA) |
| BaseEmitter Saturation Voltage | VBE(S) | -1 | -1 | V | (IC = 10 mA, IB = 1.0 mA) |
| BaseEmitter Saturation Voltage | VBE(S) | - | - | V | (IC = 50 mA, IB = 5.0 mA) |
| CurrentGain Bandwidth Product | fT | 100 | 100 | MHz | (IC = 10 mA, VCE = 10 V, f = 100 MHz) |
| Output Capacitance | Cobo | 6 | 6 | pF | (VCB = 10 V, IE = 0, f = 1.0 MHz) |
| SmallSignal Current Gain | hfe | 300 | 300 | (IC = 1.0mA, VCE = 10V, f = 1.0 kHz) | |
| Noise Figure | NF | 8 | 8 | dB | (IC =200 A,VCE= 5.0 V,Rs=10, f=1.0 kHz) |
2211091800_LRC-LMBT5401LT1G-HW_C2941705.pdf
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