NPN Transistor LRC LBC847BN3T5G Featuring RoHS Compliance and Halogen Free Material for Electronics
Key Attributes
Model Number:
LBC847BN3T5G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC847BN3T5G
Package:
SOT-883
Product Description
Product Overview
The LBC847BN3T5G and S-LBC847BN3T5G are NPN silicon general-purpose transistors designed for various applications. The 'S-' prefix denotes suitability for automotive and other applications with unique site and control change requirements, offering AEC-Q101 qualification and PPAP capability. These devices exhibit good performance characteristics, including high current gain and low saturation voltages, making them versatile components for electronic circuits.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Certifications: AEC-Q101 qualified (for S- prefix)
- Moisture Sensitivity Level: 1
- ESD Rating (Human Body Model): >4000 V
- ESD Rating (Machine Model): >400 V
Technical Specifications
| Parameter | Symbol | LBC847BN3T5G / S-LBC847BN3T5G (Min.) | LBC847BN3T5G / S-LBC847BN3T5G (Typ.) | LBC847BN3T5G / S-LBC847BN3T5G (Max.) | Unit |
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | VCEO | 45 | V | ||
| CollectorBase Voltage | VCBO | 50 | V | ||
| EmitterBase Voltage | VEBO | 6 | V | ||
| Collector Current Continuous | IC | 100 | mA | ||
| Total Device Dissipation, FR5 Board | PD | 250 | mW | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 500 | C/W | ||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | C | |
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | |||||
| OFF CHARACTERISTICS | |||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 45 | - | - | V |
| CollectorBase Breakdown Voltage | VBR(CBO) | 50 | - | - | V |
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | - | - | V |
| Collector Cutoff Current | ICBO | - | - | 50 | nA |
| ON CHARACTERISTICS | |||||
| DC Current Gain | HFE | 200 | 290 | 450 | - |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | 0.25 | - | V |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | - | 0.4 | V |
| BaseEmitter Saturation Voltage | VBE(sat) | - | 0.7 | - | V |
| BaseEmitter Saturation Voltage | VBE(sat) | - | - | 0.9 | V |
| BaseEmitter Voltage | VBE(on) | - | 0.77 | - | V |
| SMALLSIGNAL CHARACTERISTICS | |||||
| CurrentGain Bandwidth Product | fT | - | 100 | - | MHz |
| Output Capacitance | Cobo | - | - | 4.5 | pF |
| Noise Figure | NF | - | - | 10 | dB |
2410010403_LRC-LBC847BN3T5G_C2912014.pdf
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