S-LBTP460Z4TZHG PNP Transistor Featuring AEC Q101 Qualification and High Collector Current Capability
Key Attributes
Model Number:
S-LBTP460Z4TZHG
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
102MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
4.5A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S-LBTP460Z4TZHG
Package:
SOT-223
Product Description
Product Overview
The LBTP460Z4TZHG and S-LBTP460Z4TZHG are 60V PNP transistors designed for high efficiency and performance. They offer low collector-emitter saturation voltage, high collector current capability, and high collector current gain, leading to reduced heat generation and smaller PCB requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications with unique site and control change requirements. Both devices comply with RoHS and Halogen Free standards.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: PNP Transistor
- Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (S-prefix only)
- Material: Not specified
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | LBTP460Z4TZHG / S-LBTP460Z4TZHG | Unit |
|---|---|---|---|
| CollectorBase Voltage | VCBO | -60 | V |
| EmitterBase Voltage | VEBO | -5 | V |
| Collector Current Continuous | IC | -4.5 | A |
| Peak Pulse Current (tp 1 ms) | ICM | -9 | A |
| CollectorEmitter Voltage | VCEO | -60 | V |
| Junction and Storage Temperature | TJ,Tstg | -55+150 | C |
| Total Device Dissipation, FR4 Board (@ TA = 25C) | PD | 1 | W |
| Thermal Resistance, JunctiontoAmbient (@ TA = 25C) | RJA | 125 | C/W |
| Thermal Resistance, JunctiontoCase | RJC | 30 | C/W |
| Collector Cutoff Current (VCB = -60V,IE = 0 A) | ICBO | -100 | nA |
| Collector Cutoff Current (VCB = -60V,IE = 0 A, Tj = 150 C) | ICBO | -230 | nA |
| Emitter CutOff Current (VEB = 5 V, IC = 0 A ) | IEBO | -200 | nA |
| DC Current Gain (VCE = 2 V, IC = 0.5 A) | HFE | 200 | - |
| DC Current Gain (VCE = 2 V, IC = 1 A) | HFE | 150 | - |
| DC Current Gain (VCE = 2 V, IC = 2 A) | HFE | 120 | - |
| DC Current Gain (VCE = 2 V, IC = 4 A) | HFE | 70 | - |
| CollectorEmitter Saturation Voltage (IC = 0.5 A, IB = 50 mA) | VCE(sat) | -0.21 | V |
| CollectorEmitter Saturation Voltage (IC = 1 A, IB = 10 mA) | VCE(sat) | -0.77 | V |
| CollectorEmitter Saturation Voltage (IC = 1 A, IB = 50 mA) | VCE(sat) | -0.30 | V |
| CollectorEmitter Saturation Voltage (IC = 2 A, IB = 40 mA) | VCE(sat) | -0.375 | V |
| CollectorEmitter Saturation Voltage (IC = 4 A, IB = 200 mA) | VCE(sat) | -0.81 | V |
| CollectorEmitter Saturation Voltage (IC = 4 A, IB = 400 mA) | VCE(sat) | -0.9 | V |
| CollectorEmitter Saturation Voltage (IC = 4.5 A, IB = 225 mA) | VCE(sat) | -1.05 | V |
| BaseEmitter Saturation Voltage (IC = 1 A, IB = 100 mA) | VBE(sat) | -0.85 | V |
| BaseEmitter Saturation Voltage (IC = 4 A, IB = 400 mA) | VBE(sat) | -1.0 | V |
| Base-Emitter Turn-On Voltage (VCE = 2 V, IC = 2 A) | VBE(on) | -0.77 | V |
| CollectorEmitter Breakdown Voltage (IC = -1 mA,IB = 0) | VBR(CEO) | -60 | V |
| CollectorBase Breakdown Voltage (IC = -100 A,IE = 0) | VBR(CBO) | -60 | V |
| EmitterBase Breakdown Voltage (IE = -100 A,IC = 0) | VBR(EBO) | -5 | V |
| Collector-Emitter cutoff Current (VCE= -60V,IB=0) | ICEO | -10 | A |
| Transitional Frequency (VCE = 10 V, IC = 100 mA,f = 100 MHz) | fT | 150 | MHz |
| Collector capacitance (VCB = 10 V, IE = ie = 0 A,f = 1 MHz) | Cc | 65 | pF |
| Turn-on time (Pulse Test) | ton | 80 | ns |
| Delay time (Pulse Test) | td | 65 | ns |
| Rise time (Pulse Test) | tr | 120 | ns |
| Turn-off time (Pulse Test) | toff | 320 | ns |
| Storage time (Pulse Test) | ts | 225 | ns |
| Fall time (Pulse Test) | tf | 95 | ns |
2201121630_LRC-S-LBTP460Z4TZHG_C2932884.pdf
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